H10P 14/6681
The precursor containing a compound comprising si
Official title: {the precursor containing a compound comprising Si}
H10P14/6681 (The precursor containing a compound comprising si) appears on 4,822 US grants and 5,057 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,822
- Published applications
- 5,057
- Assignees
- 719
- Inventors
- 7,500
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 12 | 0 |
| 1978 | 4 | 0 |
| 1979 | 5 | 0 |
| 1980 | 8 | 0 |
| 1981 | 2 | 0 |
| 1982 | 7 | 0 |
| 1983 | 5 | 0 |
| 1984 | 5 | 0 |
| 1985 | 5 | 0 |
| 1986 | 13 | 0 |
| 1987 | 16 | 0 |
| 1988 | 14 | 0 |
| 1989 | 15 | 0 |
| 1990 | 14 | 0 |
| 1991 | 18 | 0 |
| 1992 | 17 | 0 |
| 1993 | 25 | 0 |
| 1994 | 33 | 0 |
| 1995 | 30 | 0 |
| 1996 | 33 | 0 |
| 1997 | 43 | 0 |
| 1998 | 58 | 0 |
| 1999 | 91 | 0 |
| 2000 | 142 | 0 |
| 2001 | 200 | 77 |
| 2002 | 203 | 207 |
| 2003 | 222 | 242 |
| 2004 | 191 | 249 |
| 2005 | 144 | 241 |
| 2006 | 182 | 272 |
| 2007 | 171 | 190 |
| 2008 | 129 | 171 |
| 2009 | 130 | 186 |
| 2010 | 143 | 148 |
| 2011 | 145 | 109 |
| 2012 | 109 | 113 |
| 2013 | 130 | 106 |
| 2014 | 86 | 139 |
| 2015 | 116 | 190 |
| 2016 | 168 | 181 |
| 2017 | 147 | 171 |
| 2018 | 169 | 241 |
| 2019 | 182 | 257 |
| 2020 | 215 | 263 |
| 2021 | 197 | 223 |
| 2022 | 180 | 268 |
| 2023 | 176 | 253 |
| 2024 | 176 | 220 |
| 2025 | 187 | 244 |
| 2026 | 106 | 96 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Treatment to control deposition rate29 Sep 2026US 12,751,223 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Alkoxydisiloxanes and dense organosilica films made therefrom29 Sep 2026US 12,751,224 B2Versum Materials US, LLC
- Substrate processing method and apparatus22 Sep 2026US 12,745,611 B2ASM IP Holding B. V.
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor isolation structures8 Oct 2026US 2026/0314046 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Poly-silicon based word line for 3d memory1 Oct 2026US 2026/0304772 A1Applied Materials, Inc. Santa Clara
- Precursors for low dielectric film deposition1 Oct 2026US 2026/0305199 A1Lam Research Corporation
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002
- Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process777US 5,000,113 AAPPLIED Materials.Inc. · 1991
- Silicone polymer insulation film on semiconductor substrate and method for forming the film735US 6,383,955 B1ASM Japan K .K. · 2002