Silicone polymer insulation film on semiconductor substrate and method for forming the film

A method for forming a silicone polymer insulation film on a semiconductor substrate by plasma treatment, comprising the steps of:

• providing a reaction gas consisting of a source gas and an additive gas to a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed, said source gas comprising a silicon-containing hydrocarbon compound having formula SiαOα−1R2α−β+2(OCnH2n+1)β wherein α is an integer of 1-3, β is 1 or 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, said additive gas being composed of an inert or inactive gas and optionally a reducing gas;
• heating the substrate to a point near or higher than the heat resistance temperature required for the film;
• and
• activating plasma polymerization reaction in the reaction chamber where the reaction gas is present, to form a silicone polymer film on the semiconductor substrate, while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction chamber, wherein 100 msec≦Rt,
• Rt[s]=9.42×107(Pr·Ts/Ps·Tr)rw2d/F
• wherein:
• Pr:
• reaction chamber pressure (Pa)
• Ps:
• standard atmospheric pressure (Pa)
• Tr:
• average temperature of the reaction gas (K)
• Ts:
• standard temperature (K)
• rw:
• radius of the silicon substrate (m)
• d:
• space between the silicon substrate and the upper electrode (m)
• F:
• total flow volume of the reaction gas (sccm).