H10P 14/6682
The compound being a silane
Official title: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
H10P14/6682 (The compound being a silane) appears on 2,952 US grants and 3,052 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,952
- Published applications
- 3,052
- Assignees
- 460
- Inventors
- 4,898
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 10 | 0 |
| 1978 | 4 | 0 |
| 1979 | 4 | 0 |
| 1980 | 6 | 0 |
| 1981 | 1 | 0 |
| 1982 | 5 | 0 |
| 1983 | 5 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 9 | 0 |
| 1987 | 13 | 0 |
| 1988 | 9 | 0 |
| 1989 | 7 | 0 |
| 1990 | 8 | 0 |
| 1991 | 9 | 0 |
| 1992 | 11 | 0 |
| 1993 | 12 | 0 |
| 1994 | 20 | 0 |
| 1995 | 16 | 0 |
| 1996 | 17 | 0 |
| 1997 | 28 | 0 |
| 1998 | 26 | 0 |
| 1999 | 61 | 0 |
| 2000 | 92 | 0 |
| 2001 | 140 | 51 |
| 2002 | 127 | 107 |
| 2003 | 126 | 130 |
| 2004 | 112 | 131 |
| 2005 | 82 | 132 |
| 2006 | 102 | 123 |
| 2007 | 93 | 80 |
| 2008 | 57 | 89 |
| 2009 | 62 | 95 |
| 2010 | 76 | 77 |
| 2011 | 76 | 53 |
| 2012 | 58 | 45 |
| 2013 | 51 | 56 |
| 2014 | 34 | 81 |
| 2015 | 63 | 126 |
| 2016 | 115 | 122 |
| 2017 | 95 | 117 |
| 2018 | 119 | 168 |
| 2019 | 121 | 166 |
| 2020 | 148 | 175 |
| 2021 | 129 | 148 |
| 2022 | 120 | 179 |
| 2023 | 124 | 185 |
| 2024 | 119 | 167 |
| 2025 | 143 | 182 |
| 2026 | 77 | 67 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Treatment to control deposition rate29 Sep 2026US 12,751,223 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing method15 Sep 2026US 12,740,350 B2ASM IP Holding B. V.
- Substrate processing method15 Sep 2026US 12,740,352 B2ASM IP Holding B. V.
- Thermal CVD of titanium silicide methods to form semiconductor structures1 Sep 2026US 12,727,405 B2APPLIED Materials.Inc.
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Precursors for low dielectric film deposition1 Oct 2026US 2026/0305199 A1Lam Research Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Methods of forming semiconductor device structure24 Sep 2026US 2026/0293547 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Selective tantalum nitride deposition for barrier applications10 Sep 2026US 2026/0271641 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002
- Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process777US 5,000,113 AAPPLIED Materials.Inc. · 1991
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006