Thermal CVD of titanium silicide methods to form semiconductor structures
AssigneeApplied Materials, Inc.
InventorsShumao Zhang, Qihao Zhu, Weifeng Ye, Liqi Wu, Jiang Lu
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Abstract
Methods of depositing titanium silicide (TiSi) in the formation of semiconductor structures are described. The methods include thermal chemical vapor deposition (CVD) in which a semiconductor substrate in a semiconductor processing chamber is exposed to a titanium-containing precursor, a silicon-containing precursor, and hydrogen (H2) to deposit the titanium silicide (TiSi) layer directly on the semiconductor substrate. Methods of selectively depositing titanium silicide (TiSi) in the formation of semiconductor structures, e.g., an n-type transistor and a p-type transistor, are also described.
Claims20
A method comprising:
- exposing a semiconductor structure including a semiconductor substrate in a semiconductor processing chamber to a first titanium-containing precursor, a first silicon-containing precursor, and a first reactant comprising hydrogen (H2) to deposit a first titanium silicide (TiSi) layer directly on the semiconductor substrate;
- and
- exposing the semiconductor substrate to a second titanium-containing precursor, a second silicon-containing precursor, and a second reactant comprising hydrogen (H2) to deposit a second titanium silicide (TiSi) layer directly on the first titanium silicide (TiSi) layer, wherein each of the first titanium silicide (TiSi) layer and the second titanium silicide (TiSi) layer is independently deposited by thermal CVD, and the first titanium silicide (TiSi) layer is configured as a nucleation layer for further deposition of the second titanium silicide (TiSi) layer thereon.
A method comprising:
- pre-cleaning a semiconductor substrate of a semiconductor structure in a semiconductor processing chamber to remove native oxides and form a cleaned semiconductor substrate;
- and
- exposing the cleaned semiconductor substrate to titanium tetrachloride (TiCl4), silane (SiH4), and hydrogen (H2) by a thermal chemical vapor deposition (CVD) process to deposit a titanium silicide (TiSi) layer directly on the cleaned semiconductor substrate, wherein one or more of the titanium tetrachloride (TiCl4) and the silane (SiH4) are pulsed and purged while the hydrogen (H2) and the other of the titanium tetrachloride (TiCl4) and the silane (SiH4) are continuously flowed in a carrier gas comprising argon (Ar), wherein the semiconductor structure comprises an n-type transistor and a p-type transistor, a first opening over the n-type transistor, and a second opening over the p-type transistor, and the titanium silicide (TiSi) layer selectively forms on a source/drain material of the n-type transistor and a source/drain material of the p-type transistor.
Dependencies are inferred from the claim text.