Substrate processing method
AssigneeASM IP Holding B.V.
InventorsJihye Yang, Hongsuk Kim, JuHyuk Park, SungHa Choi, SangHeon Yong, KiHun Kim
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Abstract
A substrate processing method comprising providing a substrate having a gap in a surface thereof into a reaction space, partially filling each of the plurality of gaps with a flowable silicon nitride film, forming a silicon oxide film partially filled in the gap by converting the silicon nitride film into the silicon oxide film, fully filling the gap, which is partially filled with the silicon oxide film, with a silicon nitride film, and forming a silicon oxide film to be fully filled in the gap, by converting the silicon nitride film into the silicon oxide film is provided.
Claims23
A substrate processing method comprising:
- providing a substrate having a gap in a surface thereof into a reaction space;
- partially filling the gap with a flowable first silicon nitride film;
- forming a first silicon oxide film partially filled in the gap by converting the first silicon nitride film into the first silicon oxide film;
- fully filling the gap, which is partially filled with the first silicon oxide film, with a second silicon nitride film;
- and
- forming a second silicon oxide film, by converting the second silicon nitride film into the second silicon oxide film, wherein the gap is fully filled after forming the second silicon oxide film.
A substrate processing method comprising:
- providing a substrate having a gap in a surface thereof into a reaction space;
- performing a first deposition step of depositing the gap with a flowable first silicon nitride film;
- performing a first conversion step of converting the first silicon nitride film that is deposited in the gap into a first silicon oxide film;
- performing a second deposition step of depositing a flowable second silicon nitride film on the first silicon oxide film in the gap;
- and
- performing a second conversion step of converting the second silicon nitride film in the gap into a second silicon oxide film.
Dependencies are inferred from the claim text.