Substrate processing method
AssigneeASM IP Holding B.V.
InventorsSangHeon Yong, HongSuk Kim, JuHyuk Park, SungHa Choi, KiHun Kim
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Abstract
Provided is a method of efficiently forming a dense and solid silicon oxide film on a substrate and a method of manufacturing a semiconductor device by using the same. The formation method comprises: providing a substrate to a reaction chamber; forming a flowable silicon nitride film on the substrate; converting the flowable silicon nitride film into a flowable silicon oxide film; densifying the flowable silicon oxide film; and post-treating the densified silicon oxide film with an inert gas plasma to increase a density of the silicon oxide film.
Claims19
A method of forming a silicon oxide film, the method comprising:
- providing a substrate into a reaction chamber;
- supplying a silicon precursor gas and a nitrogen reactant gas to the reaction chamber, and forming a flowable silicon nitride film on the substrate while maintaining a plasma atmosphere inside the reaction chamber;
- converting the flowable silicon nitride film into a flowable silicon oxide film;
- densifying the flowable silicon oxide film to form a densified silicon oxide film;
- and
- post-treating the densified silicon oxide film with an inert gas plasma to increase a density of the densified silicon oxide film.
A method of forming a silicon oxide film, the method comprising:
- providing a substrate to a reaction chamber;
- supplying a silicon precursor gas and a nitrogen reactant gas into the reaction chamber, and forming a flowable silicon nitride film on the substrate while maintaining a plasma atmosphere inside the reaction chamber;
- converting the flowable silicon nitride film into a flowable silicon oxide film;
- densifying the flowable silicon oxide film to form a densified silicon oxide film;
- and
- post-treating the densified silicon oxide film by applying an inert gas plasma to increase a density of the densified silicon oxide film,
- wherein the converting the flowable silicon nitride film into the flowable silicon oxide film is further facilitated through the post-treating.
Dependencies are inferred from the claim text.