Substrate processing method and apparatus
AssigneeASM IP Holding B.V.
InventorsAkinori Nakano, Toshihisa Nozawa, Ryu Nakano
Life of this patent
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Abstract
Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.
Claims20
A substrate processing method comprising:
- applying plasma on a substrate including a pattern structure, wherein applying plasma comprises supplying a first gas consisting of an inert gas and applying a first RF power for a first time period;
- after the first time period, trimming the pattern structure, wherein trimming the pattern structure comprises independently supplying a first trimming gas and a second trimming gas and applying a second RF power to maintain a plasma atmosphere for a second time period;
- and
- forming a thin film layer on a side surface and an upper surface of the pattern structure after the pattern structure is trimmed,
- wherein, during the trimming of the pattern structure, the first trimming gas is supplied through a center gas inlet of a gas supply unit, and the second trimming gas is supplied through an additional gas inlet that is spaced apart from the center gas inlet of the gas supply unit, and
- wherein the inert gas is supplied throughout the steps of applying plasma and trimming the pattern structure.
A substrate processing method comprising:
- applying plasma on a substrate on which a first pattern structure and a second pattern structure surrounding the first pattern structure are formed, wherein applying plasma comprises supplying a first gas consisting of an inert gas and applying a first RF power for a first time period;
- after the first time period, trimming the first pattern structure and the second pattern structure by supplying a first trimming gas and applying a second RF power to maintain a plasma atmosphere;
- forming a thin film layer on the first and second pattern structures in-situ with the trimming of the first and second pattern structures;
- exposing upper surfaces of the first and second pattern structures by etching the thin film layer;
- and
- performing a patterning process by using the thin film layer as a mask,
- wherein, in the trimming of the first and second pattern structures, a trimming amount of the second pattern structure is controlled by independently supplying a second trimming gas in addition to the first trimming gas, and
- wherein the inert gas is supplied throughout the steps of applying plasma and trimming the pattern structure.
Dependencies are inferred from the claim text.