H10P 14/6689
The compound being a silazane
Official title: {the compound being a silazane}
H10P14/6689 (The compound being a silazane) appears on 383 US grants and 479 published applications in this corpus.
Search patents in H10P- Granted patents
- 383
- Published applications
- 479
- Assignees
- 126
- Inventors
- 909
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 4 | 0 |
| 2000 | 1 | 0 |
| 2001 | 6 | 2 |
| 2002 | 11 | 16 |
| 2003 | 8 | 10 |
| 2004 | 11 | 17 |
| 2005 | 8 | 19 |
| 2006 | 16 | 20 |
| 2007 | 10 | 26 |
| 2008 | 10 | 12 |
| 2009 | 14 | 29 |
| 2010 | 20 | 22 |
| 2011 | 19 | 17 |
| 2012 | 11 | 23 |
| 2013 | 24 | 16 |
| 2014 | 10 | 13 |
| 2015 | 18 | 23 |
| 2016 | 10 | 17 |
| 2017 | 23 | 14 |
| 2018 | 14 | 21 |
| 2019 | 16 | 25 |
| 2020 | 9 | 11 |
| 2021 | 15 | 17 |
| 2022 | 12 | 27 |
| 2023 | 17 | 33 |
| 2024 | 17 | 26 |
| 2025 | 13 | 20 |
| 2026 | 11 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium25 Aug 2026US 12,721,065 B2Kokusai Electric Corporation
- Substrate processing method25 Aug 2026US 12,721,116 B2ASM IP Holding B. V.
- Carbon replenishment of silicon-containing material18 Aug 2026US 12,713,850 B2APPLIED Materials.Inc.
- Polysilazane, siliceous film-forming composition comprising the same, and method for producing siliceous film using the same16 Jun 2026US 12,655,318 B2Merck Patent GmbH
- Silicon compound and method of manufacturing integrated circuit device using the same9 Jun 2026US 12,649,716 B2Dnf Co., Ltd.
- Method for processing substrate and apparatus for processing substrate30 Jul 2026US 2026/0223610 A1Tokyo Electron Limited
- Enhanced ald film growth in two-zone chamber18 Jun 2026US 2026/0168093 A1ASM IP Holding B. V.
- Reactor to form films on sidewalls of memory cells29 Jan 2026US 2026/0033250 A1Micron Technology, Inc.
- Method of filling gap and processing system for same25 Dec 2025US 2025/0391655 A1ASM IP Holding B. V.
- Method for manufacturing siliceous film18 Dec 2025US 2025/0381583 A1Merck Patent GmbH
Most cited
By later US patents
- Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane790US 6,391,803 B1Samsung Electronics Co., Ltd. · 2002
- Precursors for depositing silicon containing films and processes thereof627US 7,122,222 B2Air Products and Chemicals, Inc. · 2006
- Device isolation technology on semiconductor substrate592US 7,622,369 B1ASM Japan K .K. · 2009
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Methods for forming a dielectric layer within trenches576US 7,803,722 B2APPLIED Materials.Inc. · 2010