Enhanced ald film growth in two-zone chamber
AssigneeASM IP Holding B.V.
InventorTommi Paavo Tynell
Life of this patent
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Abstract
A method for forming a film on a surface of a substrate is provided. The method including: introducing a substrate in a lower chamber of a reaction chamber, wherein the reaction chamber is separated into an upper chamber and the lower chamber using an ion trap; introducing a first plasma into the upper chamber; introducing a precursor into the reaction chamber and radicalizing the precursor using the first plasma; introducing a reactant into the reaction chamber; introducing a second plasma into the upper chamber to radicalize the reactant.
Claims20
A method for forming a film on a surface of a substrate, comprising:
- introducing a substrate in a lower chamber of a reaction chamber, wherein the reaction chamber is separated into an upper chamber and the lower chamber using an ion trap;
- introducing a first plasma into the upper chamber;
- introducing a precursor into the reaction chamber and radicalizing the precursor using the first plasma;
- introducing a reactant into the reaction chamber;
- introducing a second plasma into the upper chamber to radicalize the reactant.
A method for forming a film on a surface of a substrate, comprising:
- providing a reaction chamber having an upper chamber and a lower chamber separated by an ion trap;
- introducing a substrate into the lower chamber;
- introducing a precursor into the reaction chamber and radicalizing the precursor using a first plasma in the upper chamber to form a radicalized precursor;
- introducing a reactant into the reaction chamber and generating a second plasma in the lower chamber to break down the reactant and expose the substrate to various plasma species.
A semiconductor processing apparatus, comprising:
- a reaction chamber;
- a showerhead, located at the upper portion of the reaction chamber;
- a susceptor, located at the lower portion of the reaction chamber and supporting a substrate;
- an ion trap, located between the showerhead and the susceptor;
- a precursor source, for introducing a precursor into the reaction chamber via the showerhead;
- a reactant source, for introducing a reactant into the reaction chamber via the showerhead;
- a first RF generator, connected to the showerhead and generating a first plasma between the showerhead and the ion trap via the showerhead.
Dependencies are inferred from the claim text.