Silicon compound and method of manufacturing integrated circuit device using the same

A method of manufacturing an integrated circuit device, the method comprising forming a silicon-containing film on a substrate, by using a silicon compound represented by Chemical Formula (1):

• R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q, Chemical Formula (1)
• wherein, in Chemical Formula (1),
• m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations:
• m+p≥1, m+n≤3, and p+q≤3,
• R1 is a heterocyclic group,
• R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and
• R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.

A method of manufacturing an integrated circuit device, the method comprising:

• preparing a substrate having an active area and a device separation area;
• forming a gate dielectric film on the substrate;
• forming a gate electrode on the gate dielectric film;
• forming a gate structure by patterning the gate dielectric film and the gate electrode;
• and
• forming source/drain regions in the substrate at both sides of the gate structure, wherein forming the gate dielectric film includes:
• forming a silicon compound adsorption layer on a surface of the substrate by supplying a silicon compound represented by Chemical Formula (1) onto the substrate;
• and
• forming a silicon oxide film by supplying a reaction gas to a resultant in which the silicon compound adsorption layer is formed,
• R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q, Chemical Formula (1)
• wherein, in Chemical Formula (1),
• m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations:
• m+p≥1, m+n≤3, and p+q≤3,
• R1 is a heterocyclic group,
• R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and
• R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.