Carbon replenishment of silicon-containing material

A semiconductor processing method comprising:

• i) providing a carbon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region, wherein a silicon-containing material extends into one or more recesses defined by alternating layers of material deposited on the substrate, and wherein an exposed surface of the silicon-containing material is characterized by a first carbon concentration;
• ii) contacting the silicon-containing material with the carbon-containing precursor, wherein the contacting increases the first carbon concentration to a second carbon concentration;
• iii) providing a cleaning agent to the processing region of the semiconductor processing chamber;
• and
• iv) contacting the substrate with the cleaning agent, wherein the cleaning agent removes surface oxide from the substrate.

A semiconductor processing method comprising:

• i) providing a carbon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region, wherein a silicon-containing material extends into one or more recesses defined by alternating layers of material deposited on the substrate, and wherein an exposed surface of the silicon-containing material is characterized by a first carbon concentration;
• ii) contacting the silicon-containing material with the carbon-containing precursor, wherein the contacting increases the first carbon concentration to a second carbon concentration greater than or about 5 at. % higher than the first carbon concentration;
• iii) exposing the substrate to ultraviolet (UV) radiation;
• iv) providing a cleaning agent to the processing region of the semiconductor processing chamber;
• and
• v) contacting the substrate with the cleaning agent, wherein the cleaning agent removes surface oxide from the substrate.