Method for processing substrate and apparatus for processing substrate
AssigneeTokyo Electron Limited
InventorsMakoto WADA, Kazuyoshi YAMAZAKI, Yuichiro MOROZUMI
Life of this patent
Estimating the term…
Abstract
A method of processing a substrate includes: substituting a functional group with a hydroxyl group by heating a substrate on which a SiN film containing a silicon compound having the functional group composed of nitrogen and hydrogen is formed while supplying a first processing gas containing at least one of H2O2 or H2O to the substrate; and subsequently obtaining a SiO film by heating the substrate to desorb the hydrogen from the silicon compound while supplying, in a plasma state, a second processing gas including at least one of O2 or O3 to the substrate.
Claims19
A method of processing a substrate, the method comprising:
- substituting a functional group with a hydroxyl group by heating a substrate on which a SiN film containing a silicon compound having the functional group composed of nitrogen and hydrogen is formed while supplying a first processing gas containing at least one of H2O2 or H2O to the substrate;
- and
- subsequently obtaining a SiO film by heating the substrate to desorb the hydrogen from the silicon compound while supplying, in a plasma state, a second processing gas including at least one of O2 or O3 to the substrate.
An apparatus for processing a substrate, comprising:
- a first processing module including a first processing container provided with a first stage on which the substrate is placed, a first processing gas supplier configured to supply a first processing gas containing at least one of H2O2 or H2O into the first processing container, and a first heater configured to heat the substrate;
- a second processing module including a second processing container provided with a second stage on which the substrate is placed, a second processing gas supplier configured to supply a second processing gas containing at least one of O2 or O3 into the second process container, a plasma generator configured to convert the second processing gas into plasma and generate oxygen radicals, and a second heater configured to heat the substrate;
- and
- a controller,
- wherein the controller is configured to output a control signal for executing:
- accommodating, in the first processing container, the substrate on which a SiN film containing a silicon compound having a functional group composed of nitrogen and hydrogen is formed, and substituting the functional group with a hydroxyl group by heating the substrate while supplying the first processing gas;
- and
- subsequently accommodating the substrate in the second processing container, and obtaining a SiO film by heating the substrate to desorb the hydrogen from the silicon compound while supplying the second processing gas in a plasma state.
Dependencies are inferred from the claim text.