Method of forming conformal dielectric film having Si-N bonds by PECVD

A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD), which comprises:

• introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which the semiconductor substrate is placed;
• applying RF power to the reaction space;
• and
• introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate,
• wherein the hydrogen-containing silicon precursor is introduced in pulses of a duration of approximately 0.1 sec to 1.0 sec with an interval between pulses of approximately 0.1 sec to 3.0 sec, while the reactive gas and the additive gas are continuously introduced, and the RF power is continuously applied.