H10P 14/6528
In-situ cleaning after layer formation
Official title: {In-situ cleaning after layer formation, e.g. removing process residues}
H10P14/6528 (In-situ cleaning after layer formation) appears on 125 US grants and 157 published applications in this corpus.
Search patents in H10P- Granted patents
- 125
- Published applications
- 157
- Assignees
- 63
- Inventors
- 402
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 2 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 4 |
| 2007 | 1 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 2 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 2 | 6 |
| 2014 | 2 | 7 |
| 2015 | 6 | 14 |
| 2016 | 14 | 19 |
| 2017 | 13 | 14 |
| 2018 | 17 | 8 |
| 2019 | 7 | 14 |
| 2020 | 14 | 8 |
| 2021 | 7 | 12 |
| 2022 | 8 | 14 |
| 2023 | 9 | 6 |
| 2024 | 7 | 8 |
| 2025 | 9 | 8 |
| 2026 | 5 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing semiconductor device18 Aug 2026US 12,713,844 B2Sumitomo Electric Industries, Ltd.
- Inorganic/hybrid stress films18 Aug 2026US 12,713,848 B2Tokyo Electron Limited
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium7 Jul 2026US 12,677,612 B2Kokusai Electric Corporation
- Carrier structure and methods of forming the same7 Apr 2026US 12,599,042 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Particle removal method in semiconductor fabrication process3 Mar 2026US 12,568,785 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Carrier structure and methods of forming the same20 Aug 2026US 2026/0248043 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method and device for filling microstructured trench of semiconductor with neutron conversion material9 Jul 2026US 2026/0198237 A1Nuclear Power Institute of China
- Selective chemical atomic layer etching for metal containing compounds18 Jun 2026US 2026/0173486 A1Tokyo Electron Limited
- Removing or preventing residue subsequent to repairing low-k materials14 May 2026US 2026/0136853 A1APPLIED Materials.Inc.
- Apparatus and method for testing frame form plasma process14 May 2026US 2026/0136884 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016
- Method of reducing residual contamination in singulated semiconductor die237US 10,026,605 B2Semiconductor Components Industries, LLC · 2018
- Saving ion-damaged spacers114US 9,721,789 B1APPLIED Materials.Inc. · 2017
- Removal of surface passivation77US 9,490,145 B2ASM IP Holding B. V. · 2016
- Removal of surface passivation48US 10,115,603 B2ASM IP Holding B. V. · 2018