Apparatus and method for testing frame form plasma process

A plasma chamber, comprising:

• a housing;
• an electrostatic chuck operably coupled with the housing and configured to receive, at different times, a frame or a wafer without the frame, the frame including an adhesive surface that is configured to receive a plurality of semiconductor dies for plasma processing;
• and
• a frame receiving unit operably coupled with the housing and configured to support and position the frame with respect to the electrostatic chuck, wherein the electrostatic chuck and frame receiving unit are relatively movable between:
• a first position for positioning the frame on the frame receiving unit;
• and
• a second position that prevents interference between the frame receiving unit and the wafer during positioning of the wafer on the electrostatic chuck.

A method, comprising:

• providing a plasma chamber including an electrostatic chuck and a frame receiving unit configured to support and position a frame with respect to the electrostatic chuck, the frame including an adhesive surface that is configured to receive a plurality of semiconductor dies for plasma processing;
• adapting the electrostatic chuck to be configured to receive a wafer without the frame;
• positioning the wafer onto the electrostatic chuck without the frame;
• performing the activation process on a front side of the wafer;
• and
• transferring the wafer from the plasma chamber to a metrology tool for performing one or more measurements on the wafer to determine whether the activation process performed on the wafer using the plasma chamber satisfies a performance threshold.