Removal of surface passivation
AssigneeASM IP Holding B.V.
InventorsAntti Juhani Niskanen, Jaakko Anttila
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Abstract
Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.
Claims9
A method for removing at least a portion of a passivation film from a substrate surface comprising a first metal surface and a second dielectric surface, the method comprising:
- exposing the passivation film to a vapor phase organic reactant that is an alcohol, an aldehyde or has the formula R—COOH, where R is hydrogen or a C1 to C3 alkyl,
- wherein the passivation film was formed by exposure of the first metal surface to a passivation agent comprising a hydrocarbon, and
- wherein the passivation film is not exposed to a plasma during exposure of the passivation film to the vapor phase organic reactant, and
- selectively depositing a material on the first metal surface relative to the second dielectric surface.
Dependencies are inferred from the claim text.