H10P 14/6516
Of treatments performed after formation of the materials
Official title: {of treatments performed after formation of the materials}
H10P14/6516 (Of treatments performed after formation of the materials) appears on 5,478 US grants and 5,858 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,478
- Published applications
- 5,858
- Assignees
- 844
- Inventors
- 9,411
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 6 | 0 |
| 1978 | 8 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 3 | 0 |
| 1986 | 12 | 0 |
| 1987 | 7 | 0 |
| 1988 | 12 | 0 |
| 1989 | 11 | 0 |
| 1990 | 5 | 0 |
| 1991 | 15 | 0 |
| 1992 | 14 | 0 |
| 1993 | 17 | 0 |
| 1994 | 24 | 0 |
| 1995 | 33 | 0 |
| 1996 | 27 | 0 |
| 1997 | 38 | 0 |
| 1998 | 66 | 0 |
| 1999 | 77 | 0 |
| 2000 | 137 | 0 |
| 2001 | 212 | 79 |
| 2002 | 216 | 241 |
| 2003 | 215 | 264 |
| 2004 | 220 | 258 |
| 2005 | 153 | 290 |
| 2006 | 186 | 296 |
| 2007 | 180 | 214 |
| 2008 | 132 | 218 |
| 2009 | 157 | 193 |
| 2010 | 158 | 143 |
| 2011 | 159 | 124 |
| 2012 | 120 | 138 |
| 2013 | 147 | 148 |
| 2014 | 136 | 195 |
| 2015 | 210 | 269 |
| 2016 | 257 | 269 |
| 2017 | 241 | 245 |
| 2018 | 260 | 287 |
| 2019 | 230 | 286 |
| 2020 | 267 | 289 |
| 2021 | 218 | 257 |
| 2022 | 183 | 275 |
| 2023 | 178 | 261 |
| 2024 | 196 | 258 |
| 2025 | 193 | 233 |
| 2026 | 119 | 128 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 14/6529By exposure to a gas or vapour2,906
- H10P 14/6518By introduction of substances into an already-existing insulating layer1,764
- H10P 14/6536By exposure to radiation1,111
- H10P 14/6548By forming intermediate materials683
- H10P 14/6544To change the morphology of the insulating materials568
- H10P 14/6534By exposure to a liquid261
- H10P 14/6546To change the surface groups of the insulating materials211
- H10P 14/6528In-situ cleaning after layer formation125
Recent patents
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Cylindric decomposition for efficient mitigation of substrate deformation with film deposition and ion implantation29 Sep 2026US 12,751,253 B2APPLIED Materials.Inc.
- Systems for selective deposition using a sacrificial capping layer15 Sep 2026US 12,740,346 B2ASM IP Holding B. V.
- Substrate processing method15 Sep 2026US 12,740,350 B2ASM IP Holding B. V.
- Substrate processing method15 Sep 2026US 12,740,352 B2ASM IP Holding B. V.
- Semiconductor structure with nitrided inner spacers and method for manufacturing the same8 Oct 2026US 2026/0314010 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- In situ nucleation of diamond for thermal conductive applications8 Oct 2026US 2026/0314280 A1APPLIED Materials.Inc.
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
Most cited
By later US patents
- Sequencing of the recipe steps for the optimal low-k HDP-CVD processing882US 5,937,323 AAPPLIED Materials.Inc. · 1999
- Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing817US 6,217,658 B1APPLIED Materials.Inc. · 2001
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Post treatment of low k dielectric films670US 7,018,941 B2APPLIED Materials.Inc. · 2006