H10P 14/6534
By exposure to a liquid
Official title: {by exposure to a liquid}
H10P14/6534 (By exposure to a liquid) appears on 261 US grants and 235 published applications in this corpus.
Search patents in H10P- Granted patents
- 261
- Published applications
- 235
- Assignees
- 113
- Inventors
- 609
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 8 | 0 |
| 2000 | 11 | 0 |
| 2001 | 16 | 5 |
| 2002 | 20 | 10 |
| 2003 | 11 | 15 |
| 2004 | 13 | 12 |
| 2005 | 7 | 16 |
| 2006 | 5 | 15 |
| 2007 | 9 | 6 |
| 2008 | 8 | 8 |
| 2009 | 8 | 7 |
| 2010 | 6 | 9 |
| 2011 | 8 | 8 |
| 2012 | 7 | 3 |
| 2013 | 7 | 6 |
| 2014 | 5 | 8 |
| 2015 | 6 | 14 |
| 2016 | 21 | 14 |
| 2017 | 7 | 9 |
| 2018 | 7 | 8 |
| 2019 | 6 | 5 |
| 2020 | 10 | 16 |
| 2021 | 4 | 8 |
| 2022 | 8 | 9 |
| 2023 | 4 | 7 |
| 2024 | 8 | 8 |
| 2025 | 5 | 8 |
| 2026 | 3 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods for wet atomic layer etching of tungsten26 May 2026US 12,642,028 B2Tokyo Electron Limited
- Forming a partially silicided element17 Feb 2026US 12,557,569 B2Microchip Technology Incorporated
- Structure manufacturing method and structure6 Jan 2026US 12,518,974 B2FUJIFILM Corporation
- Semiconductor device and manufacturing method for the same9 Dec 2025US 12,495,603 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of forming thereof14 Oct 2025US 12,444,601 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ultra-large-size silicon device with diamond-based heat dissipation and preparation method thereof20 Aug 2026US 2026/0247884 A1Compound Semiconductor (Xiamen) Technology Co., Ltd.
- Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium4 Dec 2025US 2025/0372368 A1Kokusai Electric Corporation
- Methods of fabricating high-k gate structures4 Dec 2025US 2025/0372369 A1APPLIED Materials.Inc.
- Methods for wet atomic layer etching of tungsten2 Oct 2025US 2025/0308917 A1Tokyo Electron Limited
- Surface modification layer for conductive feature formation25 Sep 2025US 2025/0300008 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vapor phase repair and pore sealing of low-K dielectric materials523US 7,998,875 B2Lam Research Corporation · 2011
- Semiconductor device having multilayered wiring structure with a small parasitic capacitance149US 5,103,288 ANEC Corporation · 1992
- Low dielectric constant insulation layer for integrated circuit structure and method of making same142US 5,470,801 ALSI Logic Corporation · 1995
- Low temperature process for polysilazane oxidation/densification137US 7,521,378 B2Micron Technology, Inc. · 2009
- Method of making a semiconductor device using a low dielectric constant material135US 5,470,802 ATexas Instruments Incorporated · 1995