Forming a partially silicided element

A method of forming an integrated circuit (IC) device including (a) a partially silicided element and (b) a fully silicided element, the method comprising:

• forming a first silicided structure including a first silicide layer formed on a first base structure;
• forming a second silicided structure including a second silicide layer formed on a second base structure;
• forming a dielectric region over the first and second silicided structures;
• performing a first etch process to simultaneously form a first contact opening, a second contact opening, and a tub opening in the dielectric region, wherein the first contact opening exposes the first silicide layer, the second contact opening exposes a first area of the second silicide layer, and the tub opening has a greater lateral width than the contact opening and exposes a second area of the second silicide layer;
• depositing a conformal metal over the dielectric region, the deposited conformal metal layer:
• (a) filling the first contact opening to define a first conformal metal contact over and conductively connected to the first silicide layer;
• (b) filling the second contact opening to define a second conformal metal contact over and conductively connected to the first area of the second silicide layer;
• and
• (c) partially filling the tub opening to form a cup-shaped conformal metal structure in the tub opening over the second area of the second silicide layer;
• performing a second etch process to remove the cup-shaped conformal metal structure in the tub opening and (b) to remove the second area of the second silicide layer under the cup-shaped conformal metal structure, which exposes an area of the second base structure under the second area of the second silicide layer, wherein the first silicide layer under the first conformal metal contact and the first area of the second silicide layer under the second conformal metal contact remain intact after the second etch process;
• and
• filling the tub opening with a dielectric fill material;
• wherein the first base structure with the intact first silicide layer defines the fully silicided element;
• and
• wherein the second base structure with the intact first area of the second silicide layer and the removed second area of the second silicide layer defines the partially silicided element.