H10P 14/65
Characterised by treatments performed before or after the formation of the materials
Official title: {characterised by treatments performed before or after the formation of the materials}
H10P14/65 (Characterised by treatments performed before or after the formation of the materials) appears on 6,841 US grants and 7,236 published applications in this corpus.
Search patents in H10P- Granted patents
- 6,841
- Published applications
- 7,236
- Assignees
- 1,034
- Inventors
- 11,525
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 10 | 0 |
| 1978 | 11 | 0 |
| 1979 | 9 | 0 |
| 1980 | 5 | 0 |
| 1981 | 6 | 0 |
| 1982 | 8 | 0 |
| 1983 | 8 | 0 |
| 1984 | 5 | 0 |
| 1985 | 13 | 0 |
| 1986 | 14 | 0 |
| 1987 | 16 | 0 |
| 1988 | 14 | 0 |
| 1989 | 18 | 0 |
| 1990 | 13 | 0 |
| 1991 | 21 | 0 |
| 1992 | 21 | 0 |
| 1993 | 27 | 0 |
| 1994 | 41 | 0 |
| 1995 | 40 | 0 |
| 1996 | 37 | 0 |
| 1997 | 49 | 0 |
| 1998 | 82 | 0 |
| 1999 | 100 | 0 |
| 2000 | 175 | 0 |
| 2001 | 263 | 90 |
| 2002 | 261 | 286 |
| 2003 | 267 | 302 |
| 2004 | 270 | 316 |
| 2005 | 182 | 344 |
| 2006 | 221 | 338 |
| 2007 | 212 | 244 |
| 2008 | 140 | 246 |
| 2009 | 179 | 219 |
| 2010 | 180 | 177 |
| 2011 | 191 | 141 |
| 2012 | 144 | 177 |
| 2013 | 174 | 187 |
| 2014 | 171 | 246 |
| 2015 | 253 | 326 |
| 2016 | 308 | 326 |
| 2017 | 296 | 313 |
| 2018 | 306 | 378 |
| 2019 | 333 | 392 |
| 2020 | 354 | 380 |
| 2021 | 281 | 349 |
| 2022 | 245 | 356 |
| 2023 | 221 | 326 |
| 2024 | 244 | 324 |
| 2025 | 240 | 296 |
| 2026 | 156 | 157 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of forming thin film6 Oct 2026US 12,757,655 B2Soulbrain Co., Ltd.
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Treatment to control deposition rate29 Sep 2026US 12,751,223 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations29 Sep 2026US 12,751,226 B2APPLIED Materials.Inc.
- Cylindric decomposition for efficient mitigation of substrate deformation with film deposition and ion implantation29 Sep 2026US 12,751,253 B2APPLIED Materials.Inc.
- Semiconductor structure with nitrided inner spacers and method for manufacturing the same8 Oct 2026US 2026/0314010 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- In situ nucleation of diamond for thermal conductive applications8 Oct 2026US 2026/0314280 A1APPLIED Materials.Inc.
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
Most cited
By later US patents
- Sequencing of the recipe steps for the optimal low-k HDP-CVD processing882US 5,937,323 AAPPLIED Materials.Inc. · 1999
- Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing817US 6,217,658 B1APPLIED Materials.Inc. · 2001
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Post treatment of low k dielectric films670US 7,018,941 B2APPLIED Materials.Inc. · 2006