H10P 14/6502
Of treatments performed before formation of the materials
Official title: {of treatments performed before formation of the materials}
H10P14/6502 (Of treatments performed before formation of the materials) appears on 2,110 US grants and 2,070 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,110
- Published applications
- 2,070
- Assignees
- 531
- Inventors
- 4,550
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 5 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 5 | 0 |
| 1983 | 6 | 0 |
| 1984 | 1 | 0 |
| 1985 | 10 | 0 |
| 1986 | 2 | 0 |
| 1987 | 10 | 0 |
| 1988 | 2 | 0 |
| 1989 | 8 | 0 |
| 1990 | 8 | 0 |
| 1991 | 7 | 0 |
| 1992 | 10 | 0 |
| 1993 | 12 | 0 |
| 1994 | 22 | 0 |
| 1995 | 16 | 0 |
| 1996 | 18 | 0 |
| 1997 | 16 | 0 |
| 1998 | 25 | 0 |
| 1999 | 42 | 0 |
| 2000 | 66 | 0 |
| 2001 | 102 | 29 |
| 2002 | 91 | 83 |
| 2003 | 99 | 92 |
| 2004 | 100 | 99 |
| 2005 | 54 | 110 |
| 2006 | 75 | 84 |
| 2007 | 60 | 56 |
| 2008 | 29 | 65 |
| 2009 | 40 | 51 |
| 2010 | 46 | 50 |
| 2011 | 52 | 34 |
| 2012 | 38 | 60 |
| 2013 | 54 | 50 |
| 2014 | 47 | 70 |
| 2015 | 57 | 72 |
| 2016 | 71 | 80 |
| 2017 | 73 | 89 |
| 2018 | 78 | 121 |
| 2019 | 122 | 130 |
| 2020 | 112 | 110 |
| 2021 | 80 | 122 |
| 2022 | 76 | 109 |
| 2023 | 60 | 86 |
| 2024 | 66 | 97 |
| 2025 | 63 | 84 |
| 2026 | 57 | 37 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of forming thin film6 Oct 2026US 12,757,655 B2Soulbrain Co., Ltd.
- Treatment to control deposition rate29 Sep 2026US 12,751,223 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations29 Sep 2026US 12,751,226 B2APPLIED Materials.Inc.
- Semiconductor transistor structure and fabrication method thereof22 Sep 2026US 12,745,443 B2United Microelectronics Corp.
- Semiconductor devices and methods of manufacture22 Sep 2026US 12,745,583 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Plasma pretreatment for selective adsorption of aminosilane inhibitor24 Sep 2026US 2026/0293545 A1Lam Research Corporation
- Selectively depositing silicon oxide on a dielectric surface of a substrate17 Sep 2026US 2026/0282776 A1Lam Research Corporation
- Selective tantalum nitride deposition for barrier applications10 Sep 2026US 2026/0271641 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Sequencing of the recipe steps for the optimal low-k HDP-CVD processing882US 5,937,323 AAPPLIED Materials.Inc. · 1999
- Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing817US 6,217,658 B1APPLIED Materials.Inc. · 2001
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound663US 6,413,583 B1APPLIED Materials.Inc. · 2002
- Method for fabricating a semiconductor structure including a metal oxide interface with silicon638US 6,709,989 B2Motorola, Inc. · 2004