Semiconductor devices and methods of manufacture

A method of manufacturing a semiconductor device, the method comprising:

• cleaning a first opening through a dielectric layer, the first opening exposing a conductive region, wherein after the cleaning a first by-product is present along sidewalls of the opening and a second by-product different from the first by-product is present along a bottom of the opening;
• removing the first by-product and the second by-product with a first plasma mixture, wherein the first plasma mixture simultaneously comprises a first plasma to remove the first by-product and a second plasma to remove the second by-product;
• and
• performing one or more cleaning processes after the treating the first opening;
• filling the first opening with a conductive material.

A method of manufacturing a semiconductor device, the method comprising:

• wet cleaning a first opening through a dielectric layer, the first opening exposing a conductive region;
• performing one or more cleaning processes a first time after the wet cleaning;
• after the performing the one or more cleaning processes, treating the first opening with a first plasma mixture simultaneously comprising a first plasma to treat sidewalls of the first opening and a second plasma to treat a bottom of the first opening, the first plasma being different from the second plasma;
• performing the one or more cleaning processes a second time after the treating the first opening;
• and
• filling the first opening with a conductive material.