H10P 14/6506
Formation of intermediate materials
Official title: {Formation of intermediate materials}
H10P14/6506 (Formation of intermediate materials) appears on 1,150 US grants and 1,074 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,150
- Published applications
- 1,074
- Assignees
- 320
- Inventors
- 2,565
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 3 | 0 |
| 1983 | 6 | 0 |
| 1984 | 0 | 0 |
| 1985 | 6 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 12 | 0 |
| 1996 | 10 | 0 |
| 1997 | 13 | 0 |
| 1998 | 16 | 0 |
| 1999 | 24 | 0 |
| 2000 | 45 | 0 |
| 2001 | 78 | 20 |
| 2002 | 54 | 55 |
| 2003 | 74 | 69 |
| 2004 | 73 | 65 |
| 2005 | 29 | 80 |
| 2006 | 50 | 63 |
| 2007 | 47 | 39 |
| 2008 | 21 | 45 |
| 2009 | 26 | 42 |
| 2010 | 31 | 30 |
| 2011 | 37 | 24 |
| 2012 | 21 | 30 |
| 2013 | 31 | 25 |
| 2014 | 27 | 40 |
| 2015 | 28 | 30 |
| 2016 | 31 | 23 |
| 2017 | 30 | 42 |
| 2018 | 33 | 47 |
| 2019 | 52 | 62 |
| 2020 | 54 | 37 |
| 2021 | 32 | 45 |
| 2022 | 27 | 41 |
| 2023 | 27 | 37 |
| 2024 | 23 | 38 |
| 2025 | 26 | 30 |
| 2026 | 25 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor transistor structure and fabrication method thereof22 Sep 2026US 12,745,443 B2United Microelectronics Corp.
- Film formation method15 Sep 2026US 12,740,353 B2Tokyo Electron Limited
- Semiconductor device and method for manufacturing the same15 Sep 2026US 12,740,354 B2Fuji Electric Co., Ltd.
- Semiconductor device and methods of manufacturing the semiconductor device1 Sep 2026US 12,727,231 B2SK hynix Inc.
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Selectively depositing silicon oxide on a dielectric surface of a substrate17 Sep 2026US 2026/0282776 A1Lam Research Corporation
- Bottom-up gap fill using a liner9 Jul 2026US 2026/0198273 A1Lam Research Corporation
- 2d semiconductor device and fabrication method therefor2 Jul 2026US 2026/0190366 A1Nanjing University
Most cited
By later US patents
- Sequencing of the recipe steps for the optimal low-k HDP-CVD processing882US 5,937,323 AAPPLIED Materials.Inc. · 1999
- Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing817US 6,217,658 B1APPLIED Materials.Inc. · 2001
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound663US 6,413,583 B1APPLIED Materials.Inc. · 2002
- Method for fabricating a semiconductor structure including a metal oxide interface with silicon638US 6,709,989 B2Motorola, Inc. · 2004