Loading patent…
AssigneeLam Research Corporation
InventorsDaniel Christopher MESSINA, Douglas Walter AGNEW, Jennifer Leigh PETRAGLIA
Estimating the term…
Examples are disclosed that relate to performing a partial gap fill process in a bottom-up manner using atomic layer deposition (ALD). One example provides a method for partially filling a gap in a substrate. The method comprises depositing a sub-conformal layer of silicon nitride in a first portion of the gap and not in a second portion of the gap. The first portion extends from a top of the gap to a selected depth within the gap. The second portion extends from the selected depth to a bottom of the gap. The method further comprises performing a plurality of ALD cycles to deposit a silicon-containing oxide in the second portion of the gap. An ALD cycle comprises exposing the substrate to a silicon-containing precursor and reacting the silicon-containing precursor with an oxidant to deposit the silicon-containing oxide on a surface in the second portion of the gap.
A method for partially filling a gap in a substrate disposed in a processing chamber, the method comprising;
A method for processing a substrate comprising a gap, the method comprising:
A structure formed on a substrate in an integrated circuit manufacturing process, the structure comprising:
Dependencies are inferred from the claim text.