Plasma pretreatment for selective adsorption of aminosilane inhibitor

A processing tool comprising:

• a processing chamber;
• a substrate support within the processing chamber, the substrate support configured to support a substrate;
• flow control hardware operable to control a flow of one or more processing chemicals to the processing chamber;
• a radiofrequency power source configured to generate a plasma;
• and
• a controller configured to control the processing tool to:
• operate the radiofrequency power source and the flow control hardware to expose the substrate, the substrate comprising a substrate surface with a first material and a second material, to reactive species formed in the plasma;
• after operating the radiofrequency power source and the flow control hardware to expose the substrate surface to the reactive species formed in the plasma, operate the flow control hardware to control a flow of an aminosilane inhibitor from an aminosilane inhibitor source to expose the substrate surface to the aminosilane inhibitor, wherein the aminosilane inhibitor is configured to adsorb to the second material in a higher concentration than the first material;
• and
• operate the flow control hardware to control a flow of a dielectric film precursor from a dielectric film precursor source to deposit a dielectric film onto the substrate surface.

A method for selectively depositing a dielectric film onto a substrate surface comprising a dielectric material and a metal material, the method comprising:

• exposing the substrate surface to reactive species formed in a plasma;
• after exposing the substrate surface to the plasma, exposing the substrate surface to a dry aminosilane inhibitor, the dry aminosilane inhibitor comprising one or more of dimethylamino trimethyl silane, dimethylamino dimethyl silane, dimethylamino triethyl silane, diethylamino trimethylsilane, n-butyldimethyl(dimethylamino)silane, n-propyldimethyl(dimethylamino)silane, or triisopropyldimethylaminosilane thereby adsorbing the dry aminosilane inhibitor to the substrate surface, wherein the dry aminosilane inhibitor adsorbs to the dielectric material in a higher concentration than the dry aminosilane inhibitor adsorbs to the metal material;
• and
• without an air break following the exposure of the substrate surface to the dry aminosilane inhibitor, depositing the dielectric film onto the substrate surface, wherein the dry aminosilane inhibitor on the dielectric material inhibits deposition of the dielectric film onto the dielectric material as compared to deposition of the dielectric film on the metal material.