H10P 14/6512
By exposure to a gas or vapour
Official title: {by exposure to a gas or vapour}
H10P14/6512 (By exposure to a gas or vapour) appears on 672 US grants and 771 published applications in this corpus.
Search patents in H10P- Granted patents
- 672
- Published applications
- 771
- Assignees
- 205
- Inventors
- 1,680
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 6 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 0 | 0 |
| 1999 | 8 | 0 |
| 2000 | 16 | 0 |
| 2001 | 15 | 7 |
| 2002 | 19 | 18 |
| 2003 | 23 | 17 |
| 2004 | 16 | 17 |
| 2005 | 14 | 18 |
| 2006 | 15 | 14 |
| 2007 | 8 | 9 |
| 2008 | 7 | 15 |
| 2009 | 6 | 8 |
| 2010 | 12 | 19 |
| 2011 | 15 | 11 |
| 2012 | 16 | 18 |
| 2013 | 17 | 20 |
| 2014 | 16 | 30 |
| 2015 | 20 | 29 |
| 2016 | 25 | 34 |
| 2017 | 23 | 34 |
| 2018 | 37 | 58 |
| 2019 | 60 | 68 |
| 2020 | 46 | 56 |
| 2021 | 41 | 69 |
| 2022 | 41 | 60 |
| 2023 | 27 | 35 |
| 2024 | 38 | 46 |
| 2025 | 28 | 40 |
| 2026 | 28 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of forming thin film6 Oct 2026US 12,757,655 B2Soulbrain Co., Ltd.
- Treatment to control deposition rate29 Sep 2026US 12,751,223 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations29 Sep 2026US 12,751,226 B2APPLIED Materials.Inc.
- Semiconductor devices and methods of manufacture22 Sep 2026US 12,745,583 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming region-selective thin film using selectivating agent8 Sep 2026US 12,729,427 B2EGTM Co., Ltd.
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Plasma pretreatment for selective adsorption of aminosilane inhibitor24 Sep 2026US 2026/0293545 A1Lam Research Corporation
- Selectively depositing silicon oxide on a dielectric surface of a substrate17 Sep 2026US 2026/0282776 A1Lam Research Corporation
- Selective tantalum nitride deposition for barrier applications10 Sep 2026US 2026/0271641 A1APPLIED Materials.Inc.
- Integrated substrate processing apparatus and method20 Aug 2026US 2026/0242952 A1Picosun Oy
Most cited
By later US patents
- Method for forming a thin layer on a semiconductor substrate and apparatus therefor628US 5,178,682 AMitsubishi Denki Kabushiki Kaisha · 1993
- Sequential deposition/anneal film densification method626US 7,790,633 B1Novellus Systems, Inc. · 2010
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014
- Post-deposition treatment to enhance properties of Si-O-C low k films526US 7,326,657 B2APPLIED Materials.Inc. · 2008