Post-deposition treatment to enhance properties of Si-O-C low k films

A method of depositing a carbon-doped silicon oxide layer upon a substrate, the method comprising:

• providing the substrate to a deposition chamber;
• flowing a process gas comprising an organosilicon precursor having at least one silicon-carbon bond and an oxygen source into the deposition chamber during a first deposition step while maintaining the deposition chamber at a chamber pressure level and other process conditions suitable for depositing carbon-doped silicon oxide material over the substrate using a thermal chemical vapor deposition process;
• and
• during a second deposition step subsequent to the first deposition step, flowing a process gas comprising an organosilicon precursor having at least one silicon-carbon bond and an oxygen source into the deposition chamber while maintaining the deposition chamber at process conditions suitable for depositing carbon-doped silicon oxide material over the substrate, wherein the process conditions of the deposition chamber during the second deposition step include a chamber pressure level at least 50 Torr less than the chamber pressure level of the first deposition step;
• wherein the chamber pressure level during the first deposition step is maintained within a range of between about 200 to 700 Torr, the chamber pressure level during the second deposition step is maintained within a range of between about 50 to 150 Torr and a temperature of the substrate is increased by at least about 25° Celsius from the first deposition step to the second deposition step.