H10P 14/6514
By exposure to a plasma
Official title: {by exposure to a plasma}
H10P14/6514 (By exposure to a plasma) appears on 359 US grants and 404 published applications in this corpus.
Search patents in H10P- Granted patents
- 359
- Published applications
- 404
- Assignees
- 138
- Inventors
- 1,129
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 5 | 0 |
| 2000 | 14 | 0 |
| 2001 | 5 | 3 |
| 2002 | 6 | 10 |
| 2003 | 11 | 8 |
| 2004 | 9 | 11 |
| 2005 | 9 | 15 |
| 2006 | 8 | 9 |
| 2007 | 6 | 4 |
| 2008 | 5 | 7 |
| 2009 | 5 | 5 |
| 2010 | 8 | 13 |
| 2011 | 10 | 7 |
| 2012 | 8 | 7 |
| 2013 | 10 | 12 |
| 2014 | 11 | 14 |
| 2015 | 9 | 17 |
| 2016 | 15 | 19 |
| 2017 | 11 | 23 |
| 2018 | 24 | 18 |
| 2019 | 25 | 19 |
| 2020 | 14 | 27 |
| 2021 | 19 | 30 |
| 2022 | 24 | 36 |
| 2023 | 11 | 21 |
| 2024 | 26 | 32 |
| 2025 | 19 | 23 |
| 2026 | 19 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations29 Sep 2026US 12,751,226 B2APPLIED Materials.Inc.
- Semiconductor devices and methods of manufacture22 Sep 2026US 12,745,583 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for semiconductor processing8 Sep 2026US 12,733,414 B2Tokyo Electron Limited
- Method of forming silicon nitride film and film forming apparatus25 Aug 2026US 12,721,063 B2Tokyo Electron Limited
- Method of manufacturing semiconductor device4 Aug 2026US 12,701,937 B2Adeka Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Plasma pretreatment for selective adsorption of aminosilane inhibitor24 Sep 2026US 2026/0293545 A1Lam Research Corporation
- Selectively depositing silicon oxide on a dielectric surface of a substrate17 Sep 2026US 2026/0282776 A1Lam Research Corporation
- Selective tantalum nitride deposition for barrier applications10 Sep 2026US 2026/0271641 A1APPLIED Materials.Inc.
- Integrated substrate processing apparatus and method20 Aug 2026US 2026/0242952 A1Picosun Oy
Most cited
By later US patents
- Sequential deposition/anneal film densification method626US 7,790,633 B1Novellus Systems, Inc. · 2010
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014
- Method for forming dielectric film using siloxane-silazane mixture526US 8,003,174 B2ASM Japan K .K. · 2011
- Hydrogen treatment enhanced gap fill524US 7,211,525 B1Novellus Systems, Inc. · 2007