Hydrogen treatment enhanced gap fill
AssigneeNovellus Systems, Inc.
InventorsSunil Shanker, Sean Cox, Chi-I Lang, Judy H. Huang, Minh Anh Nguyen, Ken Vo, Wenxian Zhu
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Abstract
Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.
Claims21
A method of filling a gap on a semiconductor substrate, the method comprising:
- (a) providing a substrate having a gap in a process chamber of a high density plasma chemical vapor deposition reactor;
- (b) prior to any fluorine etch operation, treating the substrate with a hydrogen plasma;
- and
- (c) exposing the substrate to a process gas comprising a silicon-containing precursor, to thereby grow a dielectric film in the gap via high density plasma chemical vapor deposition.
A method of filling a gap on a semiconductor substrate comprising:
- (a) introducing multiple doses of a silicon-containing precursor gas to thereby grow a dielectric film in the gap via high density plasma chemical vapor deposition;
- wherein the substrate is treated with a hydrogen plasma prior to each dose and wherein the multiple doses are introduced without any intervening fluorine etch steps.
Dependencies are inferred from the claim text.