Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• performing a pretreatment process on a first surface of a first layer;
• forming an inhibitor layer on the first surface and a second surface of a second layer, the first layer including a metal nitride and the second layer not including a metal nitride, the second layer includes an acid-precursor;
• exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface based on a heat treatment process releasing acid or hydrogen cations from the acid-precursor;
• and
• forming an interest layer on the second surface having been exposed.

A method of manufacturing a semiconductor device, the method comprising:

• pretreating a first surface of a metal nitride layer with H2 plasma;
• forming a first inhibitor layer on the first surface;
• forming a second inhibitor layer on a second surface of a gap-fill insulating layer orthogonal to the first surface in a vertical direction;
• exposing the second surface and a first portion of the first surface by selectively removing the second inhibitor layer from among the first inhibitor layer and the second inhibitor layer through a heat treatment process;
• and
• forming an interest layer on the second surface and the first portion of the first surface, and
• wherein the first portion of the first surface comprises a portion, on which a portion of the second inhibitor layer contacting the first surface and the second surface is formed.