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US 8,003,174 B2Granted
Method for forming dielectric film using siloxane-silazane mixture
AssigneeASM Japan K.K.
InventorsAtsuki Fukazawa, Woo Jin Lee, Nobuo Matsuki
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Abstract
A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.
Claims14
A method of forming a dielectric film, comprising:
- introducing a siloxane gas consisting essentially of Si, O, C, and H and a silazane gas consisting essentially of Si, N, H, and optionally C into a reaction chamber where a substrate is placed;
- depositing a siloxane-based film including Si—N bonds on the substrate using both the siloxane gas and the silazane gas by plasma reaction;
- and
- annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.
1 more element
A method, comprising:
- introducing a siloxane gas consisting essentially of Si, O, C, and H and a silazane gas consisting essentially of Si, N, H, and optionally C into a reaction chamber where a substrate is placed;
- depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction;
- and
- annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film,
- wherein the deposition step is controlled to deposit the siloxane-based film in a liquid state.
2 more elements
Dependencies are inferred from the claim text.