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US 2026/0297752 A1Published application
Multiple-chamber reactor for selective deposition of silicon nitride and method of using same
AssigneeASM IP Holding B.V.
InventorsRanjit Rohidas Borude, Annisa Noorhidayati, Agung Setiadi, Hideaki Fukuda, Makoto Igarashi
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Abstract
A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatment, etch and/or cure process.
Claims20
A method of depositing silicon nitride, the method comprising:
- providing a substrate within a first reaction chamber;
- depositing silicon nitride on a surface of the substrate within the first reaction chamber to form deposited silicon nitride;
- and
- treating the deposited silicon nitride in a second reaction chamber to form treated silicon nitride,
- wherein the step of treating comprises selectively removing deposited silicon nitride, and
- wherein the first reaction chamber and the second reaction chamber form part of a module.
3 more elements
A method of depositing silicon nitride, the method comprising:
- providing a substrate within a first reaction chamber;
- depositing silicon nitride on a surface of the substrate within the first reaction chamber to form deposited silicon nitride;
- moving the substrate to a second reaction chamber;
- curing the deposited silicon nitride in the second reaction chamber to form cured silicon nitride;
- and
- etching a portion of cured silicon nitride,
- wherein the first reaction chamber and the second reaction chamber form part of a module.
4 more elements
Dependencies are inferred from the claim text.