Low temperature process for polysilazane oxidation/densification
AssigneeMicron Technology, Inc.
InventorsJanos Fucsko, John A Smythe, III, Li Li, Grady S Waldo
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Abstract
Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.
Claims84
A method of forming a silicon oxide layer in a trench on a substrate, comprising:
- wet oxidizing a polysilazane layer situated on the substrate by spraying water onto the polysilazane layer in an ozone ambient at a temperature of less than about 100° C. to produce the silicon oxide layer.
A method of forming a silicon oxide layer in a trench on a substrate, comprising:
- wet oxidizing a polysilazane layer situated on the substrate by spraying a mixture of water and ozone onto the polysilazane layer at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer in a trench on a substrate, comprising:
- wet oxidizing a polysilazane layer situated on the substrate by immersing the substrate into water comprising ozone at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer in a trench on a substrate, comprising:
- wet oxidizing a polysilazane layer situated on the substrate by applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer in a trench on a substrate, comprising;
- wet oxidizing a polysilazane layer situated on the substrate by applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce the silicon oxide layer comprising SiO2 and having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer on a substrate, comprising:
- applying water and ozone onto a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer on a substrate, comprising:
- spraying a mixture of water and ozone onto a polysilazane layer on the substrate at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer on a substrate, comprising:
- spraying water onto a polysilazane layer situated on the substrate in an ozone ambient at a temperature of less than about 100° C. to deposit an ozone/water mixture onto the polysilazane layer to produce the silicon oxide layer.
A method of forming a silicon oxide layer on a substrate, comprising:
- immersing a substrate having a polysilazane layer situated thereon into water comprising ozone at a temperature of less than about 100° C. to modify the polysilazane layer to the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing an about 50-500 nm thick polysilazane layer situated on the substrate by exposing the polysilazane layer to water and ozone at a temperature of less than about 100° C. to produce the silicon oxide layer comprising SiO2 and having a thickness of at least about 50 nm with an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce a silicon oxide layer;
- removing a portion of the silicon oxide layer;
- and
- wet oxidizing the silicon oxide layer at a temperature of less than about 100° C. to further oxidize the silicon oxide layer and polysilazane layer.
A method of forming a silicon oxide layer on a substrate, comprising:
- spin coating a polysilazane solution onto the substrate;
- drying the polysilazane solution to form a solid-phase polysilazane layer;
- and
- wet oxidizing the polysilazane layer by exposing the polysilazane layer to water and ozone at a temperature of less than about 100° C. to produce a silicon oxide layer with an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce a silicon oxide layer;
- removing a top portion of the silicon oxide layer;
- and
- wet oxidizing the silicon oxide layer at a temperature of less than about 100° C. to further oxidize the silicon oxide layer, an additional thickness of the polysilazane layer, or a combination thereof.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing a thickness of a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce a silicon oxide layer;
- removing a top portion of the silicon oxide layer;
- and
- wet oxidizing the silicon oxide layer at a temperature of less than about 100° C. to further oxidize the silicon oxide layer and an additional thickness of the polysilazane layer.
A method of forming a silicon oxide layer on a substrate, comprising:
- forming a polysilazane layer on the substrate;
- wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer;
- and
- repeating forming and wet oxidizing a polysilazane layer to form the silicon oxide layer having a desired thickness.
A method of forming a silicon oxide layer on a substrate, comprising:
- forming a polysilazane layer on the substrate;
- applying steam to the polysilazane layer to form a silicon oxide layer;
- planarizing the silicon oxide layer;
- and
- wet oxidizing the silicon oxide layer at a temperature of less than about 100° C.
A method of forming a silicon oxide layer on a substrate, comprising:
- forming a polysilazane layer on the substrate;
- wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer;
- removing a top portion of the silicon oxide layer;
- forming a polysilazane layer on the silicon oxide layer;
- and
- repeating wet oxidizing, removing and forming to form a desired thickness of the silicon oxide layer.
A method of forming a silicon oxide layer on a substrate, comprising:
- sequentially and repeatedly forming a polysilazane layer over the substrate and wet oxidizing the polysilazane layer by exposing the polysilazane layer to water and ozone at a temperature of less than about 100° C. to produce the silicon oxide layer having a desired thickness, and after wet oxidizing the polysilazane layer, removing a portion of the silicon oxide layer prior to forming the polysilazane layer.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing a polysilazane-based silicon oxide layer situated on the substrate in the presence of ozone to produce the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.
A method of forming a silicon oxide layer on a substrate, comprising:
- applying steam to a polysilazane-based silicon oxide layer situated on the substrate in the presence of ozone to produce the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing a polysilazane-based silicon oxide layer situated on the substrate by applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse to produce the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Åof the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing a polysilazane-based silicon oxide layer situated on the substrate applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse to produce the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.
A method of forming a silicon oxide layer on a substrate, comprising:
- steam oxidizing a polysilazane-based silicon oxide layer situated on the substrate in the presence of ozone at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a silicon oxide layer on a substrate, comprising:
- wet oxidizing a polysilazane-based silicon oxide layer situated on the substrate in the presence of ozone gas at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane layer situated in a trench on a substrate, comprising:
- wet oxidizing the polysilazane layer by exposure to water and ozone at a temperature of less than about 100° C. to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:
- wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:
- applying water and ozone onto the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:
- spraying a mixture of water and ozone onto the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:
- spraying water onto the polysilazane layer in an ozone ambient at a temperature of less than about 100° C. to deposit an ozone/water mixture onto the polysilazane layer to produce a silicon oxide layer.
A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:
- immersing the substrate into water comprising ozone at a temperature of less than about 100° C. to modify the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:
- applying a solution of ammonium hydroxide/hydrogen peroxide onto the polysilazane layer followed by a deionized water rinse to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:
- applying a solution of hydrochloric acid/hydrogen peroxide onto the polysilazane layer followed by a deionized water rinse to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:
- wet oxidizing the polysilazane-based silicon oxide layer by exposure to water and ozone,
- wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:
- applying steam in the presence of ozone to wet oxidize the polysilazane-based silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:
- wet oxidizing the polysilazane-based silicon oxide layer by applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.
A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:
- wet oxidizing the polysilazane-based silicon oxide layer by applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.
A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:
- steam oxidizing the polysilazane-based silicon oxide layer in the presence of ozone at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm.
A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:
- wet oxidizing the polysilazane-based silicon oxide layer in the presence of ozone gas at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm.
A method of treating a silicon oxide layer situated on a semiconductor substrate, comprising:
- wet oxidizing the silicon oxide layer at a temperature of less than about 100° C. to increase the oxygen concentration, wherein the etch rate of the silicon oxide layer using fluoride-based etchant is less than about 200 Å/minute.
A method of treating a silicon oxide layer, comprising:
- wet oxidizing the silicon oxide layer by exposure to water and ozone, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a silicon oxide layer, comprising:
- applying steam in the presence of ozone to the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS %atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a silicon oxide layer, comprising:
- wet oxidizing the silicon oxide layer by applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a silicon oxide layer, comprising:
- wet oxidizing the silicon oxide layer by applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of treating a silicon oxide layer, comprising:
- steam oxidizing the silicon oxide layer in the presence of ozone at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.
A method of treating a silicon oxide layer, comprising:
- wet oxidizing the silicon oxide layer in the presence of ozone at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.
A method of fabricating an isolation region in a substrate, comprising:
- forming a shallow trench in the substrate;
- forming a polysilazane layer over the substrate and in the trench;
- and
- wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to form a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming an isolation region within a silicon-comprising substrate, comprising:
- forming a masking layer over the silicon-comprising substrate and an opening extending therethrough exposing a portion of the substrate;
- etching the exposed portion of the substrate to form an opening extending into the substrate;
- removing the masking layer;
- spin coating a polysilazane layer onto the substrate and into the opening;
- wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant;
- and
- removing a portion of the silicon oxide layer to an upper surface of the substrate to form an isolation structure within the trench.
A method of forming an isolation region within a silicon-comprising substrate, comprising:
- forming a shallow trench within the substrate, the trench having an oxide surface layer;
- forming a silicon oxide layer over the oxide layer within the trench by:
- spin coating a polysilazane layer onto the substrate and into the trench;
- and
- wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to form a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant;
- and
- planarizing the silicon oxide layer to form the isolation region within the trench.
A method for filling a trench in a layer situated on a semiconductor substrate, the method comprising:
- spin coating a polysilazane layer to at least partially fill the trench;
- and
- wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of filling a shallow trench isolation trench with silicon dioxide, comprising:
- spin coating a polysilazane layer to at least partially fill the trench;
- and
- wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of fabricating a semiconductor device, comprising:
- depositing a layer of polysilazane onto a material layer;
- and
- processing the polysilazane layer in a wet oxidation by exposure to water and ozone at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
A method of forming a semiconductor device, comprising:
- forming an opening in a material layer;
- depositing a polysilazane material within the opening;
- and
- processing the polysilazane material in a wet oxidation by exposure to water and ozone at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.
Dependencies are inferred from the claim text.