Structure manufacturing method and structure
AssigneeFUJIFILM Corporation
InventorTomokazu Umezawa
Life of this patent
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Abstract
A structure is manufactured by forming a mask that has an opening pattern on a fine recessed and projected structure of a substrate having the fine recessed and projected structure with an average period of 1 μm or less on a surface thereof, etching the surface of the substrate from a side of the mask to form a recessed portion which has an opening greater than the average period of the fine recessed and projected structure according to the opening pattern of the mask, the recessed portion having a depth equal to or greater than double a difference in height between recesses and projections of the fine recessed and projected structure, and then removing the mask.
Claims10
A method of manufacturing a mold including a recessed portion and a recessed and projected structure formed on the periphery of the recessed portion, the method comprising:
- a mask formation step of forming a mask that has an opening pattern on substrate having the recessed and projected structure with an average period of 1 μm or less on a surface thereof;
- a dry etching step of etching the surface of the substrate from a side of the mask to form the recessed portion which has an opening greater than the average period of the recessed and projected structure according to the opening pattern of the mask, the recessed portion having a depth equal to or greater than double a difference in height between recesses and projections of the recessed and projected structure;
- a mask removal step of removing the mask after the dry etching step, thereby producing the mold;
- and
- a recessed and projected structure formation step of forming the recessed and projected structure on the surface of the substrate,
- wherein the recessed and projected structure formation step includes a step of forming a thin film including aluminum on the surface of the substrate, a step of changing the thin film including aluminum into a recessed and projected layer including alumina hydrate through hot water treatment using water having a temperature of 60° C. or higher, a step of etching the surface of the substrate from a side of the recessed and projected layer, and a step of removing the recessed and projected layer.
Dependencies are inferred from the claim text.