H10P 14/6518
By introduction of substances into an already-existing insulating layer
Official title: {by introduction of substances into an already-existing insulating layer}
H10P14/6518 (By introduction of substances into an already-existing insulating layer) appears on 1,764 US grants and 1,956 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,764
- Published applications
- 1,956
- Assignees
- 339
- Inventors
- 3,281
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 5 | 0 |
| 1994 | 5 | 0 |
| 1995 | 4 | 0 |
| 1996 | 7 | 0 |
| 1997 | 4 | 0 |
| 1998 | 8 | 0 |
| 1999 | 19 | 0 |
| 2000 | 30 | 0 |
| 2001 | 67 | 23 |
| 2002 | 46 | 60 |
| 2003 | 62 | 77 |
| 2004 | 60 | 75 |
| 2005 | 36 | 75 |
| 2006 | 57 | 98 |
| 2007 | 53 | 58 |
| 2008 | 36 | 67 |
| 2009 | 44 | 59 |
| 2010 | 49 | 48 |
| 2011 | 56 | 41 |
| 2012 | 45 | 55 |
| 2013 | 43 | 47 |
| 2014 | 48 | 71 |
| 2015 | 76 | 103 |
| 2016 | 101 | 106 |
| 2017 | 92 | 88 |
| 2018 | 100 | 112 |
| 2019 | 98 | 124 |
| 2020 | 103 | 102 |
| 2021 | 85 | 87 |
| 2022 | 64 | 101 |
| 2023 | 63 | 100 |
| 2024 | 79 | 87 |
| 2025 | 57 | 63 |
| 2026 | 41 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Cylindric decomposition for efficient mitigation of substrate deformation with film deposition and ion implantation29 Sep 2026US 12,751,253 B2APPLIED Materials.Inc.
- Substrate processing method15 Sep 2026US 12,740,352 B2ASM IP Holding B. V.
- Semiconductor device and methods of manufacturing the semiconductor device1 Sep 2026US 12,727,231 B2SK hynix Inc.
- Ferroelectric devices and methods of forming the same25 Aug 2026US 12,720,759 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Semiconductor structure with nitrided inner spacers and method for manufacturing the same8 Oct 2026US 2026/0314010 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Semiconductor structure and method for forming the same1 Oct 2026US 2026/0305198 A1VisEra Technologies Company Limited
- Methods of using high energy excited state helium radicals for post nitridation anneal or post oxidation anneal24 Sep 2026US 2026/0293546 A1
- Stacked transistors having isolation layers between epitaxial structures17 Sep 2026US 2026/0282470 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method and system for improving dielectric film quality for void free gap fill649US 7,541,297 B2APPLIED Materials.Inc. · 2009
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Methods for forming a dielectric layer within trenches576US 7,803,722 B2APPLIED Materials.Inc. · 2010
- Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing543US 7,109,098 B1APPLIED Materials.Inc. · 2006
- Annealing of high-k dielectric materials538US 6,544,906 B2Texas Instruments Incorporated · 2003