H10P 14/6519
The substance being oxygen
Official title: {the substance being oxygen}
H10P14/6519 (The substance being oxygen) appears on 873 US grants and 1,001 published applications in this corpus.
Search patents in H10P- Granted patents
- 873
- Published applications
- 1,001
- Assignees
- 217
- Inventors
- 1,836
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 0 | 0 |
| 1998 | 4 | 0 |
| 1999 | 8 | 0 |
| 2000 | 10 | 0 |
| 2001 | 26 | 11 |
| 2002 | 21 | 36 |
| 2003 | 31 | 41 |
| 2004 | 26 | 29 |
| 2005 | 12 | 31 |
| 2006 | 33 | 33 |
| 2007 | 14 | 17 |
| 2008 | 12 | 19 |
| 2009 | 16 | 23 |
| 2010 | 19 | 19 |
| 2011 | 14 | 22 |
| 2012 | 19 | 26 |
| 2013 | 22 | 19 |
| 2014 | 21 | 41 |
| 2015 | 49 | 56 |
| 2016 | 60 | 67 |
| 2017 | 51 | 52 |
| 2018 | 56 | 70 |
| 2019 | 50 | 56 |
| 2020 | 56 | 49 |
| 2021 | 45 | 60 |
| 2022 | 36 | 62 |
| 2023 | 37 | 55 |
| 2024 | 45 | 52 |
| 2025 | 38 | 38 |
| 2026 | 22 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Substrate processing method15 Sep 2026US 12,740,352 B2ASM IP Holding B. V.
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Semiconductor device and method of manufacture18 Aug 2026US 12,713,677 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Inertial sensor, method of manufacturing inertial sensor, and inertial measurement unit28 Jul 2026US 12,693,307 B2Seiko Epson Corporation
- Methods of using high energy excited state helium radicals for post nitridation anneal or post oxidation anneal24 Sep 2026US 2026/0293546 A1
- Stacked transistors having isolation layers between epitaxial structures17 Sep 2026US 2026/0282470 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon insulation film forming method10 Sep 2026US 2026/0271638 A1Jusung Engineering Co., Ltd.
- Equal matching of oxidation rate between sige and si through clustered pre-clean and pre-surface nitridation13 Aug 2026US 2026/0239898 A1APPLIED Materials.Inc.
- Method of forming treated silicon-carbon material30 Jul 2026US 2026/0223609 A1ASM IP Holding B. V.
Most cited
By later US patents
- Method and system for improving dielectric film quality for void free gap fill649US 7,541,297 B2APPLIED Materials.Inc. · 2009
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Methods for forming a dielectric layer within trenches576US 7,803,722 B2APPLIED Materials.Inc. · 2010
- Annealing of high-k dielectric materials538US 6,544,906 B2Texas Instruments Incorporated · 2003
- Tantalum lanthanide oxynitride films527US 7,902,582 B2Micron Technology, Inc. · 2011