Silicon insulation film forming method
AssigneeJusung Engineering Co., Ltd.
InventorsJin Ho LEE, Jung Min KWON, Yoon Jeong KIM, Chul Joo HWANG
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Abstract
Presented is a method for forming a silicon insulating layer, and more particularly, to a method for forming a silicon insulating layer that is doped with oxygen on a substrate. A method for forming a silicon insulating layer according to an exemplary embodiment may be a method for forming a silicon insulating layer that is doped with oxygen and include preparing a substrate in a reaction space, forming a silicon insulating layer on the substrate through an atomic layer deposition process, and generating plasma in the reaction space by using a gas containing oxygen to dope oxygen into the silicon insulating layer.
Claims16
A method for forming a silicon insulating layer that is doped with oxygen, the method comprising:
- preparing a substrate in a reaction space;
- forming a silicon insulating layer on the substrate through an atomic layer deposition process;
- and
- generating plasma in the reaction space by using a gas containing oxygen to dope oxygen into the silicon insulating layer.
A method for forming a silicon insulating layer that is doped with oxygen, the method comprising:
- preparing a substrate in a reaction space;
- supplying a gas containing silicon and a gas containing nitrogen onto the substrate to form a silicon insulating layer on the substrate through an atomic layer deposition process;
- and
- generating plasma in the reaction space by using a gas containing oxygen to dope oxygen into the silicon insulating layer.
Dependencies are inferred from the claim text.