H10P 14/6522
Introduced into a nitride material
Official title: {introduced into a nitride material, e.g. changing SiN to SiON}
H10P14/6522 (Introduced into a nitride material) appears on 533 US grants and 619 published applications in this corpus.
Search patents in H10P- Granted patents
- 533
- Published applications
- 619
- Assignees
- 137
- Inventors
- 1,184
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 6 | 0 |
| 2000 | 7 | 0 |
| 2001 | 18 | 5 |
| 2002 | 16 | 16 |
| 2003 | 15 | 27 |
| 2004 | 14 | 16 |
| 2005 | 5 | 13 |
| 2006 | 13 | 18 |
| 2007 | 9 | 10 |
| 2008 | 4 | 14 |
| 2009 | 9 | 19 |
| 2010 | 13 | 11 |
| 2011 | 11 | 18 |
| 2012 | 12 | 21 |
| 2013 | 19 | 12 |
| 2014 | 11 | 23 |
| 2015 | 27 | 37 |
| 2016 | 43 | 38 |
| 2017 | 27 | 29 |
| 2018 | 33 | 38 |
| 2019 | 24 | 26 |
| 2020 | 25 | 29 |
| 2021 | 30 | 42 |
| 2022 | 24 | 43 |
| 2023 | 29 | 39 |
| 2024 | 34 | 37 |
| 2025 | 22 | 26 |
| 2026 | 14 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate processing method15 Sep 2026US 12,740,352 B2ASM IP Holding B. V.
- Semiconductor device and method of manufacture18 Aug 2026US 12,713,677 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Composition and methods using same for carbon doped silicon containing films21 Jul 2026US 12,690,400 B2Versum Materials US, LLC
- Transistor gate isolation structures and methods of forming the same2 Jun 2026US 12,648,191 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Stacked transistors having isolation layers between epitaxial structures2 Jun 2026US 12,648,192 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of using high energy excited state helium radicals for post nitridation anneal or post oxidation anneal24 Sep 2026US 2026/0293546 A1
- Stacked transistors having isolation layers between epitaxial structures17 Sep 2026US 2026/0282470 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Equal matching of oxidation rate between sige and si through clustered pre-clean and pre-surface nitridation13 Aug 2026US 2026/0239898 A1APPLIED Materials.Inc.
- Method for processing substrate and apparatus for processing substrate30 Jul 2026US 2026/0223610 A1Tokyo Electron Limited
- Low k dielectric gapfill23 Jul 2026US 2026/0215182 A1Lam Research Corporation
Most cited
By later US patents
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Methods for forming a dielectric layer within trenches576US 7,803,722 B2APPLIED Materials.Inc. · 2010
- Tantalum lanthanide oxynitride films527US 7,902,582 B2Micron Technology, Inc. · 2011
- Method for forming inorganic silazane-based dielectric film483US 7,781,352 B2ASM Japan K .K. · 2010
- Method for forming film filled in trench without seam or void479US 9,812,319 B1ASM IP Holding B. V. · 2017