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US 2026/0215182 A1Published application
Low k dielectric gapfill
AssigneeLam Research Corporation
InventorsBart J. van Schravendijk, Michael David Galluzzo, Joel David Smith, Dennis M. Hausmann
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Abstract
The present invention involves a method for depositing low-k dielectric material in a feature, the method comprising: depositing a silicon-containing layer in one or more recessed features of a substrate; exposing at least a portion of the silicon-containing layer to an oxygen-containing species, thereby forming a silicon oxide-containing portion in the silicon-containing layer; and at least partially etching the silicon oxide-containing portion.
Claims10
A method comprising:
- depositing a silicon-containing layer in one or more recessed features of a substrate;
- exposing at least a portion of the silicon-containing layer to an oxygen-containing species, thereby forming a silicon oxide-containing portion in the silicon-containing layer;
- and
- at least partially etching the silicon oxide-containing portion.
1 more element
Dependencies are inferred from the claim text.