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US 7,781,352 B2Granted
Method for forming inorganic silazane-based dielectric film
AssigneeASM Japan K.K.
InventorsAtsuki Fukazawa, Nobuo Matsuki, Jeongseok Ha
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Abstract
A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.
Claims14
A method of forming a dielectric film, comprising:
- introducing a gas consisting of Si, H, and N or consisting of Si H, N, and C into a reaction chamber where an object is placed;
- controlling a temperature of the object at −50° C. to 50° C.;
- and
- depositing by plasma reaction an inorganic silazane-based film constituted by Si, N, and H containing inorganic silazane bonds,
- said method further comprising introducing into the reaction chamber an additive gas consisting of C and H or consisting of C, H, and O continuously before, simultaneously with, or continuously after the deposition of the inorganic silazane-based film on the object.
2 more elements
A method for forming an interconnect structure, comprising the steps of:
- forming a three-dimensional structure for interconnect in a substrate;
- and
- forming an insulation layer on a surface of the three-dimensional structure using a method comprising:
- introducing a gas consisting of Si, H, and N or consisting of Si H, N, and C into a reaction chamber where an object is placed, wherein in the gas introducing step, no oxygen-supplying gas is introduced into the reaction chamber;
- controlling a temperature of the object at −50° C. to 50° C.;
- and
- depositing by plasma reaction an inorganic silazane-based film constituted by Si, N, and H containing inorganic silazane bonds.
4 more elements
A method of forming a dielectric film, comprising the steps of:
- introducing a gas constituted by Si H, N and optionally C into a reaction chamber where an object is placed;
- controlling a temperature of the object at −50° C. to 50° C.;
- depositing by plasma reaction an inorganic silazane-based film constituted by Si, N, and H containing inorganic silazane bonds;
- and
- adding fluidity to the inorganic silazane-based film so as to be flowable on the object, by using a hydrocarbon gas.
2 more elements
Dependencies are inferred from the claim text.