H10P 14/6524
The substance being nitrogen
Official title: {the substance being nitrogen}
H10P14/6524 (The substance being nitrogen) appears on 700 US grants and 770 published applications in this corpus.
Search patents in H10P- Granted patents
- 700
- Published applications
- 770
- Assignees
- 181
- Inventors
- 1,452
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 8 | 0 |
| 2000 | 15 | 0 |
| 2001 | 30 | 9 |
| 2002 | 25 | 33 |
| 2003 | 37 | 39 |
| 2004 | 28 | 52 |
| 2005 | 23 | 44 |
| 2006 | 32 | 55 |
| 2007 | 30 | 39 |
| 2008 | 23 | 39 |
| 2009 | 28 | 39 |
| 2010 | 26 | 22 |
| 2011 | 37 | 19 |
| 2012 | 19 | 24 |
| 2013 | 13 | 18 |
| 2014 | 13 | 19 |
| 2015 | 23 | 34 |
| 2016 | 45 | 49 |
| 2017 | 35 | 21 |
| 2018 | 30 | 31 |
| 2019 | 24 | 28 |
| 2020 | 26 | 31 |
| 2021 | 26 | 19 |
| 2022 | 15 | 29 |
| 2023 | 17 | 25 |
| 2024 | 22 | 21 |
| 2025 | 14 | 20 |
| 2026 | 10 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Semiconductor structure with nitrided inner spacers and method for manufacturing the same23 Jun 2026US 12,666,679 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Oxide film preparation method26 May 2026US 12,637,754 B2Beijing Naura Microelectronics Equipment Co., Ltd.
- Oxide removal for contact plugs26 May 2026US 12,642,030 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Isolation structure and memory device14 Apr 2026US 12,604,715 B2Winbond Electronics Corp.
- Semiconductor structure with nitrided inner spacers and method for manufacturing the same8 Oct 2026US 2026/0314010 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same1 Oct 2026US 2026/0305198 A1VisEra Technologies Company Limited
- Methods of using high energy excited state helium radicals for post nitridation anneal or post oxidation anneal24 Sep 2026US 2026/0293546 A1
- Gate oxide stack for sic mosfet10 Sep 2026US 2026/0271371 A1Microchip Technology Incorporated
- Equal matching of oxidation rate between sige and si through clustered pre-clean and pre-surface nitridation13 Aug 2026US 2026/0239898 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method of fabricating silicon nitride nanodots535US 7,092,287 B2ASM International N.V. · 2006
- Tantalum lanthanide oxynitride films527US 7,902,582 B2Micron Technology, Inc. · 2011
- Process for forming thin dielectric layers in semiconductor devices518US 6,281,141 B1Steag RTP Systems, Inc. · 2001
- Method for forming multi-element thin film constituted by at least five elements by PEALD475US 9,343,297 B1ASM IP Holding B. V. · 2016
- Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device470US 9,412,582 B2Hitachi Kokusai Electric Inc. · 2016