Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device

A substrate processing apparatus, comprising:

• a reaction tube, configured to constitute a process chamber in which a plurality of substrates is processed, including an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, having a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit and the second exhaust slit being formed in a lateral surface of the inner tube, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in an insulating region lower than the substrate arrangement region;
• a process gas supply unit configured to supply a process gas into the reaction tube;
• and
• a gas exhaust unit configured to exhaust the process gas from the reaction tube, and
• wherein the second exhaust slit has an opening area smaller than that of the first exhaust slit.

A method of manufacturing a semiconductor device, comprising:

• transferring a plurality of substrates to a reaction tube for constituting a process chamber in which the plurality of substrates is processed, and including an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, having a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit and the second exhaust slit being formed in a lateral surface of the inner tube, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in an insulating region lower than the substrate arrangement region;
• supplying a predetermined process gas into the reaction tube to process the plurality of substrates;
• and
• exhausting the predetermined process gas through the first exhaust slit and the second exhaust slit, and
• wherein the second exhaust slit has an opening area smaller than that of the first exhaust slit.