Process for forming thin dielectric layers in semiconductor devices

A process for forming thin oxide coatings on a semiconductor device, said process comprising the steps of:

• placing a semiconductor wafer in a thermal processing chamber;
• heating said semiconductor wafer in said chamber using light energy, said wafer being increased in temperature to a first target temperature at a first preselected rate, said preselected rate being an average rate ranging from about 50° C. per second to about 250° C. per second;
• circulating a first gas within said chamber, said first gas containing an oxygen compound;
• reacting said first gas with said semiconductor wafer to form an oxide coating while the temperature of said semiconductor wafer is being increased at said first preselected rate to said first target temperature, wherein said wafer is maintained at said first target temperature for less than about 1 second, said oxide coating having a thickness of up to about 100 angstroms;
• cooling said semiconductor wafer;
• reheating said semiconductor wafer in said chamber, said wafer being increased in temperature to a second target temperature at a second preselected rate, said second preselected rate being an average rate ranging from about 50° C. per second to about 250° C. per second;
• circulating a second gas within said chamber, said second gas containing a nitrogen compound;
• and
• reacting said second gas with said oxide coating to form an oxynitride while the temperature of said semiconductor wafer is being increased at said second preselected rate to said second target temperature, wherein said wafer is maintained at said second target temperature for less than about 1 second.

A process for forming thin oxide coatings on a semiconductor device, said process comprising the steps of:

• placing a semiconductor wafer in a thermal processing chamber;
• heating said semiconductor wafer in said chamber, said wafer being increased in temperature to a target temperature at a preselected rate;
• circulating a reactive gas within said chamber;
• and
• reacting said gas with said semiconductor wafer to form an oxide coating while the temperature of said semiconductor wafer is being increased at said preselected rate to said target temperature, wherein said wafer is maintained at said target temperature for less than about 1 second.

A process for forming thin oxide coatings on a semiconductor device, said process comprising the steps of:

• placing a semiconductor wafer in a thermal processing chamber;
• heating said semiconductor wafer in said chamber, said wafer being increased in temperature to a target temperature at a preselected rate;
• circulating a reactive gas within said chamber, wherein said reactive gas comprises a material selected from the group consisting of molecular oxygen, ozone, steam and mixtures thereof;
• reacting said gas with said semiconductor wafer to form an oxide coating while the temperature of said semiconductor wafer is being increased at said preselected rate to said target temperature, wherein said wafer is maintained at said target temperature for less than about 2 seconds;
• cooling said semiconductor wafer after forming said oxide coating;
• reheating said semiconductor wafer in said chamber, said wafer being increased in temperature to a second target temperature at a second preselected rate;
• circulating a gas comprising a compound containing nitrogen within said chamber;
• and
• reacting said oxide coating with nitrogen contained in said gas to form an oxynitride while the temperature of said semiconductor wafer is being increased at said second preselected rate to said second target temperature, wherein said wafer is maintained at said second target temperature for less than about 2 seconds.