H10P 14/6526
Introduced into an oxide material
Official title: {introduced into an oxide material, e.g. changing SiO to SiON}
H10P14/6526 (Introduced into an oxide material) appears on 563 US grants and 606 published applications in this corpus.
Search patents in H10P- Granted patents
- 563
- Published applications
- 606
- Assignees
- 150
- Inventors
- 1,148
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 8 | 0 |
| 2000 | 15 | 0 |
| 2001 | 27 | 8 |
| 2002 | 24 | 27 |
| 2003 | 30 | 33 |
| 2004 | 26 | 38 |
| 2005 | 17 | 30 |
| 2006 | 23 | 41 |
| 2007 | 25 | 32 |
| 2008 | 15 | 36 |
| 2009 | 23 | 31 |
| 2010 | 20 | 20 |
| 2011 | 32 | 18 |
| 2012 | 18 | 21 |
| 2013 | 12 | 16 |
| 2014 | 12 | 11 |
| 2015 | 15 | 24 |
| 2016 | 35 | 43 |
| 2017 | 27 | 18 |
| 2018 | 25 | 21 |
| 2019 | 18 | 22 |
| 2020 | 18 | 20 |
| 2021 | 16 | 13 |
| 2022 | 10 | 22 |
| 2023 | 12 | 21 |
| 2024 | 19 | 17 |
| 2025 | 11 | 15 |
| 2026 | 8 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Oxide film preparation method26 May 2026US 12,637,754 B2Beijing Naura Microelectronics Equipment Co., Ltd.
- Oxide removal for contact plugs26 May 2026US 12,642,030 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Isolation structure and memory device14 Apr 2026US 12,604,715 B2Winbond Electronics Corp.
- Metal-comprising bottom isolation structures10 Mar 2026US 12,575,141 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same1 Oct 2026US 2026/0305198 A1VisEra Technologies Company Limited
- Methods of using high energy excited state helium radicals for post nitridation anneal or post oxidation anneal24 Sep 2026US 2026/0293546 A1
- Gate oxide stack for sic mosfet10 Sep 2026US 2026/0271371 A1Microchip Technology Incorporated
- Equal matching of oxidation rate between sige and si through clustered pre-clean and pre-surface nitridation13 Aug 2026US 2026/0239898 A1APPLIED Materials.Inc.
- Integrated wet clean for gate stack development25 Jun 2026US 2026/0182290 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Tantalum lanthanide oxynitride films527US 7,902,582 B2Micron Technology, Inc. · 2011
- Process for forming thin dielectric layers in semiconductor devices518US 6,281,141 B1Steag RTP Systems, Inc. · 2001
- Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same426US 10,106,892 B1Globalfoundries Inc. · 2018
- Method for manufacturing semiconductor device391US 8,324,699 B2Semiconductor Energy Laboratory Co.Ltd. · 2012
- Tantalum nitride CVD deposition by tantalum oxide densification285US 6,638,810 B2APPLIED Materials.Inc. · 2003