Gate oxide stack for sic mosfet

A method of making a trench metal oxide semiconductor field-effect transistor, the method comprising:

• creating a trench in a volume of semiconductor material, the trench including a surface;
• etching the surface of the trench;
• providing an initial layer of thermal oxide on the surface of the trench;
• performing on the initial layer of thermal oxide an operation selected from the group consisting of:
• nitridizing and thermal annealing;
• depositing a first layer of gate oxide on the initial layer of thermal oxide;
• depositing a second layer of gate oxide on the first layer of gate oxide using a plasma-enhanced chemical vapor deposition process;
• and
• thermally annealing the first and second layers of gate oxide.

A trench field-effect transistor comprising:

• a volume of semiconductor material including a first end and a second end;
• a source located at the first end of the volume of semiconductor material;
• a trench located adjacent to the source and extending into the volume of semiconductor material, the trench including a surface;
• a first layer of gate oxide deposited on the surface of the trench;
• and
• a second layer of gate oxide deposited on the first layer of gate oxide, the second layer of gate oxide deposited via plasma-enhanced chemical vapor deposition process,
• wherein the first and second layers of gate oxide are thermally annealed.