H10P 14/6529
By exposure to a gas or vapour
Official title: {by exposure to a gas or vapour}
H10P14/6529 (By exposure to a gas or vapour) appears on 2,906 US grants and 3,053 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,906
- Published applications
- 3,053
- Assignees
- 516
- Inventors
- 5,548
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 3 | 0 |
| 1978 | 5 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 1 | 0 |
| 1986 | 5 | 0 |
| 1987 | 2 | 0 |
| 1988 | 8 | 0 |
| 1989 | 7 | 0 |
| 1990 | 3 | 0 |
| 1991 | 9 | 0 |
| 1992 | 6 | 0 |
| 1993 | 10 | 0 |
| 1994 | 14 | 0 |
| 1995 | 24 | 0 |
| 1996 | 17 | 0 |
| 1997 | 26 | 0 |
| 1998 | 43 | 0 |
| 1999 | 51 | 0 |
| 2000 | 80 | 0 |
| 2001 | 122 | 43 |
| 2002 | 135 | 164 |
| 2003 | 142 | 159 |
| 2004 | 133 | 155 |
| 2005 | 97 | 159 |
| 2006 | 113 | 187 |
| 2007 | 108 | 140 |
| 2008 | 84 | 118 |
| 2009 | 97 | 119 |
| 2010 | 96 | 76 |
| 2011 | 98 | 52 |
| 2012 | 70 | 71 |
| 2013 | 68 | 60 |
| 2014 | 53 | 84 |
| 2015 | 98 | 129 |
| 2016 | 92 | 104 |
| 2017 | 99 | 110 |
| 2018 | 103 | 120 |
| 2019 | 102 | 136 |
| 2020 | 119 | 133 |
| 2021 | 104 | 119 |
| 2022 | 89 | 148 |
| 2023 | 91 | 140 |
| 2024 | 109 | 131 |
| 2025 | 95 | 130 |
| 2026 | 61 | 66 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Substrate processing method15 Sep 2026US 12,740,352 B2ASM IP Holding B. V.
- Methods for depositing gap-filling fluids and related systems and devices8 Sep 2026US 12,729,435 B2ASM IP Holding B. V.
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Methods to improve oxide sidewall quality25 Aug 2026US 12,721,062 B2APPLIED Materials.Inc.
- Semiconductor structure with nitrided inner spacers and method for manufacturing the same8 Oct 2026US 2026/0314010 A1Taiwan Semiconductor Manufacturing Company.Ltd
- In situ nucleation of diamond for thermal conductive applications8 Oct 2026US 2026/0314280 A1APPLIED Materials.Inc.
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Methods of using high energy excited state helium radicals for post nitridation anneal or post oxidation anneal24 Sep 2026US 2026/0293546 A1
Most cited
By later US patents
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Method and system for improving dielectric film quality for void free gap fill649US 7,541,297 B2APPLIED Materials.Inc. · 2009
- Process for forming a low dielectric constant carbon-containing film647US 6,632,478 B2APPLIED Materials.Inc. · 2003
- Method for manufacturing porous structure and method for forming pattern645US 6,565,763 B1Kabushiki Kaisha Toshiba · 2003
- Ultraviolet curing processes for advanced low-k materials617US 6,756,085 B2Axcelis Technologies, Inc. · 2004