Methods to improve oxide sidewall quality

A semiconductor processing method comprising:

• providing a silicon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate comprising one or more features is housed within the processing region of the semiconductor processing chamber;
• generating plasma effluents of the silicon-containing precursor in the processing region;
• depositing a silicon-containing material on a vertically extending portion of the one or more features and a horizontally extending portion of the one or more features;
• providing plasma effluents of a second silicon-containing precursor in the processing region, increasing an atomic percentage of silicon in the vertically extending portion of the silicon-containing material by greater than or about 0.5%.

A semiconductor processing method comprising:

• providing a silicon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate comprising one or more features is housed within the processing region of the semiconductor processing chamber;
• generating plasma effluents of the silicon-containing precursor in the processing region;
• depositing a silicon-containing material on a vertically extending portion of the one or more features and a horizontally extending portion of the one or more features;
• providing plasma effluents of a second silicon-containing precursor in the processing region at a temperature of about 380° C. to about 500° C., a pressure of from about 5 torr to about 350 torr, a time of about 5 minutes to about 40 minutes, or a combination thereof,
• soaking the silicon-containing material with the second silicon-containing precursor, increasing an atomic percentage of silicon in the vertically extending portion of the silicon-containing material by greater than or about 0.5%.