H10P 14/6548
By forming intermediate materials
Official title: {by forming intermediate materials, e.g. capping layers or diffusion barriers}
H10P14/6548 (By forming intermediate materials) appears on 683 US grants and 602 published applications in this corpus.
Search patents in H10P- Granted patents
- 683
- Published applications
- 602
- Assignees
- 196
- Inventors
- 1,461
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 10 | 0 |
| 1996 | 12 | 0 |
| 1997 | 6 | 0 |
| 1998 | 11 | 0 |
| 1999 | 17 | 0 |
| 2000 | 37 | 0 |
| 2001 | 57 | 14 |
| 2002 | 48 | 37 |
| 2003 | 34 | 38 |
| 2004 | 37 | 35 |
| 2005 | 32 | 54 |
| 2006 | 27 | 43 |
| 2007 | 33 | 29 |
| 2008 | 17 | 39 |
| 2009 | 24 | 27 |
| 2010 | 25 | 12 |
| 2011 | 23 | 19 |
| 2012 | 16 | 13 |
| 2013 | 19 | 11 |
| 2014 | 9 | 13 |
| 2015 | 18 | 18 |
| 2016 | 21 | 23 |
| 2017 | 20 | 19 |
| 2018 | 19 | 23 |
| 2019 | 13 | 22 |
| 2020 | 22 | 21 |
| 2021 | 12 | 15 |
| 2022 | 17 | 16 |
| 2023 | 9 | 11 |
| 2024 | 9 | 21 |
| 2025 | 10 | 18 |
| 2026 | 11 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Systems for selective deposition using a sacrificial capping layer15 Sep 2026US 12,740,346 B2ASM IP Holding B. V.
- Semiconductor device and methods of manufacturing the semiconductor device1 Sep 2026US 12,727,231 B2SK hynix Inc.
- Selective capping of contact layer for CMOS devices7 Jul 2026US 12,677,472 B2APPLIED Materials.Inc.
- Manufacturing method of semiconductor device19 May 2026US 12,635,485 B2Semiconductor Energy Laboratory Co.Ltd.
- Method for manufacturing a composite structure comprising a thin single-crystal semiconductor layer on a carrier substrate5 May 2026US 12,622,189 B2Soitec
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Method of forming a dielectric layer10 Sep 2026US 2026/0271636 A1ASM IP Holding B. V.
- Manufacturing Method Of Semiconductor Device13 Aug 2026US 2026/0239937 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor memory devices9 Jul 2026US 2026/0197999 A1Samsung Electronics Co., Ltd.
- Substrate surface treatment for stiffener bonding25 Jun 2026US 2026/0182380 A1Intel Corporation
Most cited
By later US patents
- Sequencing of the recipe steps for the optimal low-k HDP-CVD processing882US 5,937,323 AAPPLIED Materials.Inc. · 1999
- Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing817US 6,217,658 B1APPLIED Materials.Inc. · 2001
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound663US 6,413,583 B1APPLIED Materials.Inc. · 2002
- Process for forming a low dielectric constant carbon-containing film647US 6,632,478 B2APPLIED Materials.Inc. · 2003