Manufacturing method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Shunichi Ito, Yoshihiro Komatsu, Shinobu Kawaguchi, Shinya Sasagawa
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Abstract
A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.
Claims9
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a first insulator;
- forming a conductor over the first insulator;
- forming a second insulator over the conductor;
- forming a third insulator over the second insulator;
- forming an oxide over the third insulator;
- performing microwave treatment after the oxide is formed so that hydrogen in the oxide is removed and oxygen is supplied to the oxide;
- performing first heat treatment;
- and
- performing second heat treatment following the first heat treatment,
- wherein a temperature of the first heat treatment is lower than a temperature of the second heat treatment, and
- wherein the microwave treatment is performed in an atmosphere containing oxygen.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a first insulator;
- forming a conductor over the first insulator;
- forming a second insulator over the conductor;
- forming a third insulator over the second insulator;
- forming an oxide over the third insulator;
- performing first heat treatment so that hydrogen in the oxide and the third insulator is removed and absorbed into the second insulator;
- and
- performing second heat treatment following the first heat treatment so that hydrogen in the second insulator is removed and absorbed into the first insulator,
- wherein a temperature of the first heat treatment is lower than a temperature of the second heat treatment.
Dependencies are inferred from the claim text.