Method of forming a dielectric layer
AssigneeASM IP Holding B.V.
InventorKamesh Mullapudi
Life of this patent
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Abstract
Methods for forming a dielectric layer in a feature, where the dielectric layer may be free of voids and/or seams, are disclosed. An exemplary method includes providing a substrate comprising one or more features in a reaction chamber, depositing a dielectric layer in the one or more features, and performing a treatment. The treatment may change the crystal structure from a first crystal structure to a second crystal structure. The treatment may remove voids and/or seams from the dielectric layer.
Claims20
A method for forming a dielectric layer, the method comprising:
- providing a substrate comprising one or more features on a surface of the substrate;
- depositing a dielectric layer in the one or more features;
- performing a treatment to change a crystal structure of the dielectric layer from a first crystal structure to a second crystal structure, wherein the first crystal structure is different than the second crystal structure.
A method for forming a dielectric layer, the method comprising:
- providing a substrate comprising one or more features on a surface of the substrate;
- depositing a dielectric layer in the one or more features, wherein the dielectric layer comprises one or more seams or voids;
- and
- treating the dielectric layer, wherein treating the dielectrics layer removes the one or more seams or voids,
- wherein treating the dielectric layer comprises heating the substrate to a temperature between about 350° C. and about 450° C., or providing an inert gas at a temperature above 300° C. and a pressure between about 0.1 Torr and 60 Torr, exposing the substrate to a reactive plasma, laser annealing the dielectric layer, or forming a stress layer directly on the dielectric layer, wherein the stress layer has a different lattice constant that the dielectric layer.
A method for removing one or more voids or seams from a dielectric layer, the method comprising:
- providing a substrate comprising the dielectric layer in one or more features on a surface of the substrate wherein the dielectric layer comprises one or more seams or voids;
- and
- treating the dielectric layer, wherein treating the dielectric layer changes a crystal structure of the dielectric layer form a first crystal structure to a second crystal structure and removes the one or more seams or voids,
- wherein treating the dielectric layer comprises heating the substrate to a temperature between about 350° C. and about 450° C., or providing an inert gas at a above 300° C. and a pressure between about 0.1 Torr and 60 Torr, exposing the substrate to a reactive plasma, laser annealing the dielectric layer, or forming a stress layer directly on the dielectric layer, wherein the stress layer has a different lattice constant that the dielectric layer.
Dependencies are inferred from the claim text.